公开(公告)号：US20150014699A1

公开(公告)日：2015-01-15

申请号：US14327204

申请日：2014-07-09

申请人： Seoul Semiconductor Co., Ltd.

发明人： Takeya Motonobu ,  Kwan Hyun Lee ,  Young Do Jeong

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7788 ,  H01L21/268 ,  H01L21/6835 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381

摘要： A vertical transistor includes a drain electrode disposed on a first region of a substrate, a drift layer disposed on a second region of the substrate spaced apart from the first region, and P-type gallium nitride current barrier layers disposed on the drift layer and comprising a current aperture disposed between current barrier layers. A channel layer is disposed on the drift layer and the current barrier layers. A semiconductor layer is disposed on the channel layer and configured to induce formation of a two-dimension electron gas layer adjacent to a top surface thereof. Metal contact plugs are disposed in the channel layer and contact the current barrier layers. A source electrode is disposed on the contact plugs and the channel layer. A gate insulation layer and a gate electrode are sequentially disposed on a top surface of the semiconductor layer opposite to the channel layer.

摘要翻译： 垂直晶体管包括设置在衬底的第一区域上的漏极电极，设置在与第一区域间隔开的衬底的第二区域上的漂移层以及设置在漂移层上的P型氮化镓电流势垒层， 设置在电流阻挡层之间的电流孔。 沟道层设置在漂移层和电流阻挡层上。 半导体层设置在沟道层上并且被配置为引起邻近其顶表面的二维电子气层的形成。 金属接触插塞设置在通道层中并接触电流阻挡层。 源电极设置在接触插塞和沟道层上。 栅极绝缘层和栅电极依次设置在与沟道层相对的半导体层的顶表面上。

公开(公告)号：US20140252370A1

公开(公告)日：2014-09-11

申请号：US14198011

申请日：2014-03-05

申请人： Seoul Semiconductor Co., Ltd.

发明人： June Sik KWAK ,  Young Do Jong ,  Ho Young Cha ,  Bong Ryeol Park ,  Jae Gil Lee ,  Kwan Hyun Lee

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/778 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

摘要： Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

摘要翻译： 本发明的示例性实施例公开了一种单向异质结晶体管，其包括由具有第一能带隙的第一氮化物基半导体制成的沟道层，由具有不同于第一能量的第二能量带隙的第二氮化物基半导体制成的势垒层 带隙，阻挡层包括凹部，设置在阻挡层的第一区域上的漏电极和设置在阻挡层的凹部中的凹陷式肖特基电极，该漏极肖特基电极与漏电极接触。

公开(公告)号：US20140225122A1

公开(公告)日：2014-08-14

申请号：US14177825

申请日：2014-02-11

申请人： Seoul Semiconductor Co., Ltd.

发明人： Motonobu TAKEYA ,  Kwan Hyun Lee ,  June Sik Kwak ,  Young Do Jong ,  Kang Nyung Lee

IPC分类号： H01L29/778 ,  H01L29/20

CPC分类号： H01L29/7788 ,  B82Y10/00 ,  H01L21/6835 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/122 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/34 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/66909 ,  H01L29/7802 ,  H01L29/7828 ,  H01L29/802 ,  H01L29/8083 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381

摘要： A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.

摘要翻译： 根据本发明的示例性实施例的垂直氮化镓晶体管包括半导体结构，其包括具有第一表面和侧壁的第一导电类型的第一半导体层，围绕第一表面的第一导电类型的第二半导体层 和第一半导体层的侧壁以及设置在第一半导体层和第二半导体层之间的第二导电类型的第三半导体层，第三半导体层将第一和第二半导体层彼此分离。

公开(公告)号：US09219137B2

公开(公告)日：2015-12-22

申请号：US14177825

申请日：2014-02-11

申请人： Seoul Semiconductor Co., Ltd.

发明人： Motonobu Takeya ,  Kwan Hyun Lee ,  June Sik Kwak ,  Young Do Jong ,  Kang Nyung Lee

IPC分类号： H01L29/15 ,  H01L29/778 ,  H01L29/32 ,  H01L29/66 ,  H01L21/683 ,  H01L29/78 ,  H01L29/06 ,  H01L29/80 ,  B82Y10/00 ,  H01L29/34 ,  H01L29/417 ,  H01L29/04 ,  H01L29/20 ,  H01L29/423 ,  H01L29/808 ,  H01L29/12

CPC分类号： H01L29/7788 ,  B82Y10/00 ,  H01L21/6835 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/122 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/34 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/66909 ,  H01L29/7802 ,  H01L29/7828 ,  H01L29/802 ,  H01L29/8083 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381

摘要： A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.

摘要翻译： 根据本发明的示例性实施例的垂直氮化镓晶体管包括半导体结构，其包括具有第一表面和侧壁的第一导电类型的第一半导体层，围绕第一表面的第一导电类型的第二半导体层 和第一半导体层的侧壁以及设置在第一半导体层和第二半导体层之间的第二导电类型的第三半导体层，第三半导体层将第一和第二半导体层彼此分离。

公开(公告)号：US09171946B2

公开(公告)日：2015-10-27

申请号：US14198011

申请日：2014-03-05

申请人： Seoul Semiconductor Co., Ltd.

发明人： June Sik Kwak ,  Young Do Jong ,  Ho Young Cha ,  Bong Ryeol Park ,  Jae Gil Lee ,  Kwan Hyun Lee

IPC分类号： H01L29/15 ,  H01L29/778 ,  H01L29/66 ,  H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/10

CPC分类号： H01L29/778 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

摘要： Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

摘要翻译： 本发明的示例性实施例公开了一种单向异质结晶体管，其包括由具有第一能带隙的第一氮化物基半导体制成的沟道层，由具有不同于第一能量的第二能量带隙的第二氮化物基半导体制成的势垒层 带隙，阻挡层包括凹部，设置在阻挡层的第一区域上的漏电极和设置在阻挡层的凹部中的凹陷式肖特基电极，该漏极肖特基电极与漏电极接触。

公开(公告)号：US20150060943A1

公开(公告)日：2015-03-05

申请号：US14470164

申请日：2014-08-27

申请人： Seoul Semiconductor Co., Ltd.

发明人： Takeya MOTONOBU ,  Kwan Hyun Lee ,  Eun Hee Kim

IPC分类号： H01L29/78 ,  H01L29/20 ,  H01L21/02 ,  H01L29/423 ,  H01L29/417 ,  H01L23/367 ,  H01L29/66 ,  H01L29/205

CPC分类号： H01L29/7827 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L23/367 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/32 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66446 ,  H01L29/66666 ,  H01L29/7828 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a nitride-based transistor includes sequentially forming a first nitride-based semiconductor layer doped with first type dopant, a second nitride-based semiconductor layer doped with at least one of a second type dopant, and a third nitride-based semiconductor layer doped with at least one of the first type dopants. A first trench is formed to penetrate the third and second nitride-based semiconductor layers and to extend into the first nitride-based semiconductor layer. A fourth nitride-based semiconductor layer doped with the first type dopants is formed to fill the first trench. A second trench is formed in the fourth nitride-based semiconductor layer. A gate electrode is formed in the second trench. A source electrode is formed to be electrically connected to at least one of the third and fourth nitride-based semiconductor layers, and a drain electrode is formed to be electrically connected to the first nitride-based semiconductor layer.

摘要翻译： 一种制造氮化物基晶体管的方法包括：顺序地形成掺杂有第一类型掺杂剂的第一氮化物基半导体层，掺杂有第二类型掺杂剂中的至少一种的第二氮化物基半导体层和第三氮化物基半导体 层中掺杂有至少一种第一类型掺杂剂。 形成第一沟槽以穿透第三和第二氮化物基半导体层并延伸到第一氮化物基半导体层中。 掺杂有第一类型掺杂剂的第四氮化物基半导体层被形成以填充第一沟槽。 在第四氮化物基半导体层中形成第二沟槽。 在第二沟槽中形成栅电极。 源电极形成为与第三氮化物类半导体层和第四氮化物系半导体层中的至少一方电连接，并且形成漏电极以与第一氮化物基半导体层电连接。