公开(公告)号：US09171946B2

公开(公告)日：2015-10-27

申请号：US14198011

申请日：2014-03-05

申请人： Seoul Semiconductor Co., Ltd.

发明人： June Sik Kwak ,  Young Do Jong ,  Ho Young Cha ,  Bong Ryeol Park ,  Jae Gil Lee ,  Kwan Hyun Lee

IPC分类号： H01L29/15 ,  H01L29/778 ,  H01L29/66 ,  H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/10

CPC分类号： H01L29/778 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

摘要： Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

摘要翻译： 本发明的示例性实施例公开了一种单向异质结晶体管，其包括由具有第一能带隙的第一氮化物基半导体制成的沟道层，由具有不同于第一能量的第二能量带隙的第二氮化物基半导体制成的势垒层 带隙，阻挡层包括凹部，设置在阻挡层的第一区域上的漏电极和设置在阻挡层的凹部中的凹陷式肖特基电极，该漏极肖特基电极与漏电极接触。

公开(公告)号：US20140252370A1

公开(公告)日：2014-09-11

申请号：US14198011

申请日：2014-03-05

申请人： Seoul Semiconductor Co., Ltd.

发明人： June Sik KWAK ,  Young Do Jong ,  Ho Young Cha ,  Bong Ryeol Park ,  Jae Gil Lee ,  Kwan Hyun Lee

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/778 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

摘要： Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

摘要翻译： 本发明的示例性实施例公开了一种单向异质结晶体管，其包括由具有第一能带隙的第一氮化物基半导体制成的沟道层，由具有不同于第一能量的第二能量带隙的第二氮化物基半导体制成的势垒层 带隙，阻挡层包括凹部，设置在阻挡层的第一区域上的漏电极和设置在阻挡层的凹部中的凹陷式肖特基电极，该漏极肖特基电极与漏电极接触。