公开(公告)号：US12041800B2

公开(公告)日：2024-07-16

申请号：US17777384

申请日：2020-11-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuro Kanemura ,  Yusuke Negoro

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device having a color imaging function and an infrared imaging function is provided. The imaging device has a structure in which a first photoelectric conversion device and a second photoelectric conversion device are stacked, and the second photoelectric conversion device generates electric charge by absorbing infrared light and transmits light having a wavelength of a higher energy than that of infrared light. The first photoelectric conversion device is positioned to overlap with the second photoelectric conversion device, and generates electric charge by absorbing light (visible light) passing through the second photoelectric conversion device. Thus, a subpixel for color imaging and a subpixel for infrared imaging can be positioned to overlap with each other, and an infrared imaging function can be added without a decrease in the definition of color imaging.

公开(公告)号：US11862649B2

公开(公告)日：2024-01-02

申请号：US18117784

申请日：2023-03-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi Yoneda ,  Hidetomo Kobayashi ,  Takashi Nakagawa ,  Yusuke Negoro ,  Shunpei Yamazaki

IPC: H04N25/79 ,  H04N25/532 ,  H04N25/78 ,  H01L27/146 ,  H04N25/75 ,  H04N25/531 ,  H04N25/771

CPC classification number: H01L27/14612 ,  H04N25/531 ,  H04N25/532 ,  H04N25/75 ,  H04N25/771 ,  H04N25/78 ,  H04N25/79

Abstract: An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

公开(公告)号：US11849234B2

公开(公告)日：2023-12-19

申请号：US17630074

申请日：2020-07-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi Yoneda ,  Hiromichi Godo ,  Yusuke Negoro ,  Hiroki Inoue ,  Takahiro Fukutome

IPC: H04N25/75 ,  H04N25/46 ,  H04N25/71

CPC classification number: H04N25/75 ,  H04N25/46 ,  H04N25/745

Abstract: An imaging device with a novel structure is provided. The imaging device includes an imaging region provided with a plurality of pixels. The plurality of pixels included in the imaging region include a first pixel and a second pixel. The imaging device has a function of selecting a first region or a second region. The first region includes the same number of pixels as the second region. The first region includes at least the first and second pixels. The second region includes at least the second pixel. The pixels included in the first region or the second region have a function of outputting imaging signals obtained by the pixels. The imaging device generates first image data by concurrently reading the imaging signals output from the pixels included in the first region and performing arithmetic operation on the signals. The imaging device generates second image data by concurrently reading the imaging signals output from the pixels included in the second region and performing arithmetic operation on the signals. A first conceptual image can be generated with the use of the first image data and the second image data.

公开(公告)号：US11600645B2

公开(公告)日：2023-03-07

申请号：US17057526

申请日：2019-06-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi Yoneda ,  Hidetomo Kobayashi ,  Takashi Nakagawa ,  Yusuke Negoro ,  Shunpei Yamazaki

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/353 ,  H04N5/378 ,  H04N5/3745

Abstract: An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

公开(公告)号：US12120446B2

公开(公告)日：2024-10-15

申请号：US18008302

申请日：2021-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunsuke Sato ,  Seiichi Yoneda ,  Yusuke Negoro ,  Takeya Hirose ,  Shunpei Yamazaki

IPC: H04N25/77

CPC classification number: H04N25/77

Abstract: An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel unit, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel unit and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, whereby power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are stacked, so that the lengths of wirings between the circuits can be reduced, and high-speed operation with low power consumption can be performed.

公开(公告)号：US11847195B2

公开(公告)日：2023-12-19

申请号：US17279637

申请日：2019-09-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi Yoneda ,  Yusuke Negoro

IPC: G06F21/31 ,  G06F16/22 ,  H01L25/16 ,  G06V10/143 ,  G06V40/13 ,  G06V40/14 ,  H01L27/146 ,  H01L27/15 ,  H01L29/786 ,  H01L31/12 ,  G06V40/12

CPC classification number: G06F21/31 ,  G06F16/22 ,  G06V10/143 ,  G06V40/1318 ,  G06V40/14 ,  H01L25/167 ,  G06V40/1347 ,  G06V40/1365 ,  H01L27/14616 ,  H01L27/15 ,  H01L29/7869 ,  H01L31/12

Abstract: A novel authentication system is provided. In addition, a method for recording an unlocking history is provided. The authentication system includes an arithmetic device and an input/output device. The arithmetic device supplies first control data and second control data, and is supplied with a sensor signal. The input/output device includes an electric lock and a reading portion, and the electric lock is unlocked on the basis of the second control data. The reading portion is supplied with the first control data, supplies the sensor signal, and includes a light-emitting element and a pixel array. The light-emitting element emits light including infrared rays, the pixel array includes pixels, the pixels each include an imaging circuit and a photoelectric conversion element, the imaging circuit is electrically connected to the photoelectric conversion element, the imaging circuit includes a transistor, and the transistor includes an oxide semiconductor film.

公开(公告)号：US11728355B2

公开(公告)日：2023-08-15

申请号：US17403911

申请日：2021-08-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Shintaro Harada ,  Hidetomo Kobayashi ,  Roh Yamamoto ,  Kiyotaka Kimura ,  Takashi Nakagawa ,  Yusuke Negoro

IPC: H01L27/146 ,  H01L27/12 ,  H01L29/786 ,  H04N25/40 ,  H04N25/77 ,  H04N25/766

CPC classification number: H01L27/14605 ,  H01L27/1225 ,  H01L27/14612 ,  H01L27/14643 ,  H01L29/7869 ,  H04N25/40 ,  H04N25/766 ,  H04N25/77

Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.

公开(公告)号：US11595594B2

公开(公告)日：2023-02-28

申请号：US17282129

申请日：2019-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Ikeda ,  Yusuke Negoro

IPC: H04N5/33 ,  A61B5/00 ,  H01L27/28 ,  G06V40/10 ,  G06V40/14

Abstract: An imaging apparatus including a light source is provided. The imaging apparatus includes a light-emitting device and a photoelectric conversion device in a pixel, and a pixel circuit has a function of outputting third data generated by multiplying obtained first data by second data (weight). Calculating the third data externally enables more detailed information on a subject with respect to a specific wavelength to be obtained. In addition, reading out collectively a plurality of pixels to which proper weight is given enables output of difference data between pixels and the like, which allows external calculation to be omitted.

公开(公告)号：US12126344B2

公开(公告)日：2024-10-22

申请号：US18008287

申请日：2021-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeya Hirose ,  Seiichi Yoneda ,  Yusuke Negoro

IPC: H03K3/356 ,  H01L29/786

CPC classification number: H03K3/35613 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device with low power consumption can be provided. The semiconductor device includes a differential circuit and a latch circuit, the differential circuit includes a transistor including an oxide semiconductor in a channel formation region, and the latch circuit includes a transistor including a single semiconductor or a compound semiconductor in a channel formation region. The differential circuit and the latch circuit include an overlap region.

公开(公告)号：US11991438B2

公开(公告)日：2024-05-21

申请号：US17626566

申请日：2020-07-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi Yoneda ,  Yusuke Negoro

IPC: H04N23/63 ,  H01L27/146

CPC classification number: H04N23/631 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14616

Abstract: An imaging device capable of executing image processing is provided. An imaging device with low power consumption is provided. A highly reliable imaging device is provided. An imaging device with higher integration degree of pixels is provided. An imaging device manufactured at low cost is provided. The imaging device includes a photoelectric conversion device, a first transistor that is formed in a first layer and includes silicon in a channel formation layer, and a capacitor that is formed in a second layer bonded to the first layer. One of a source and a drain of the first transistor is electrically connected to one of electrodes of the photoelectric conversion device, and the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the capacitor. A pixel having a function of generating first data and a function of multiplying the first data to have a given magnification to generate second data is included. The first data and the second data each have an analog value.