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公开(公告)号：US11670705B2
公开(公告)日：2023-06-06
申请号：US17176211
申请日：2021-02-16
发明人： Shunpei Yamazaki , Toshihiko Takeuchi , Naoto Yamade , Hiroshi Fujiki , Tomoaki Moriwaka , Shunsuke Kimura
CPC分类号： H01L29/66969 , H01L29/1054 , H01L29/4966
摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.-
公开(公告)号：US11004961B2
公开(公告)日：2021-05-11
申请号：US16492282
申请日：2018-02-28
发明人： Shunpei Yamazaki , Toshihiko Takeuchi , Naoto Yamade , Hiroshi Fujiki , Tomoaki Moriwaka , Shunsuke Kimura
摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.-
公开(公告)号：US10734487B2
公开(公告)日：2020-08-04
申请号：US16247631
申请日：2019-01-15
发明人： Hiroki Komagata , Naoki Okuno , Yutaka Okazaki , Hiroshi Fujiki
IPC分类号： H01L27/12 , H01L29/20 , H01L29/423 , H01L29/786 , H01L29/221 , H01L29/10 , H01L29/66 , H01L29/778 , H01L29/24
摘要： A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator over a substrate, an oxide over the first insulator, a second insulator over the oxide, a conductor overlapping with the oxide with the second insulator therebetween, a third insulator in contact with a top surface of the oxide, a fourth insulator in contact with a top surface of the third insulator, a side surface of the second insulator, and a side surface of the conductor, and a fifth insulator in contact with a side surface of the fourth insulator, a side surface of the third insulator, and the top surface of the oxide. The third insulator has a lower oxygen permeability than the fourth insulator.
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公开(公告)号：US10411003B2
公开(公告)日：2019-09-10
申请号：US15725519
申请日：2017-10-05
发明人： Naoki Okuno , Kosei Nei , Hiroaki Honda , Naoto Yamade , Hiroshi Fujiki
IPC分类号： H01L27/02 , H01L27/11519 , H01L27/11565 , H01L29/786 , H01L27/11521
摘要： A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.
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公开(公告)号：US10290720B2
公开(公告)日：2019-05-14
申请号：US15642400
申请日：2017-07-06
摘要： The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.
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公开(公告)号：US10910359B2
公开(公告)日：2021-02-02
申请号：US16561501
申请日：2019-09-05
发明人： Naoki Okuno , Kosei Nei , Hiroaki Honda , Naoto Yamade , Hiroshi Fujiki
IPC分类号： H01L27/02 , H01L27/11521 , H01L27/11519 , H01L27/11565 , H01L29/786
摘要： A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.
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公开(公告)号：US11955538B2
公开(公告)日：2024-04-09
申请号：US18135793
申请日：2023-04-18
发明人： Shunpei Yamazaki , Toshihiko Takeuchi , Naoto Yamade , Hiroshi Fujiki , Tomoaki Moriwaka , Shunsuke Kimura
CPC分类号： H01L29/66969 , H01L29/1054 , H01L29/4966
摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.-
公开(公告)号：US09818849B2
公开(公告)日：2017-11-14
申请号：US14527103
申请日：2014-10-29
发明人： Shinya Sasagawa , Hiroshi Fujiki , Yoshinori Ieda
IPC分类号： H01L29/66 , H01L29/417 , H01L29/786 , H01L21/4757 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02178 , H01L21/02554 , H01L21/02565 , H01L21/47573 , H01L29/41733 , H01L29/66742 , H01L29/7869
摘要： A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film.
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公开(公告)号：US09293598B2
公开(公告)日：2016-03-22
申请号：US14141831
申请日：2013-12-27
IPC分类号： H01L29/786 , H01L29/45 , H01L29/49
CPC分类号： H01L29/4908 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/7869
摘要： The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.
摘要翻译： 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。
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公开(公告)号：US20140183529A1
公开(公告)日：2014-07-03
申请号：US14141831
申请日：2013-12-27
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/7869
摘要： The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.
摘要翻译： 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。
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