Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US17176211Application Date: 2021-02-16
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Publication No.: US11670705B2Publication Date: 2023-06-06
- Inventor: Shunpei Yamazaki , Toshihiko Takeuchi , Naoto Yamade , Hiroshi Fujiki , Tomoaki Moriwaka , Shunsuke Kimura
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 17047420 2017.03.13 JP 17072177 2017.03.31
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/10 ; H01L29/49
Abstract:
A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
Public/Granted literature
- US20210167194A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-06-03
Information query
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