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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11881513B2

    公开(公告)日：2024-01-23

    申请号：US17047724

    申请日：2019-04-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kosei Nei ,  Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Kentaro Sugaya

    IPC: H01L27/00 ,  H01L29/00 ,  H01L29/24 ,  H01L27/12 ,  H10B12/00

    CPC classification number: H01L29/24 ,  H01L27/1225 ,  H10B12/312

    Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10600918B2

    公开(公告)日：2020-03-24

    申请号：US15211218

    申请日：2016-07-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Yasumasa Yamane

    IPC: H01L29/12 ,  H01L29/51 ,  H01L27/12 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78

    Abstract: Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

    SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
    10.
    发明申请
    SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT 有权
    半导体元件，半导体器件和半导体元件的制造方法

    公开(公告)号：US20130256665A1

    公开(公告)日：2013-10-03

    申请号：US13803022

    申请日：2013-03-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD

    Inventor： Toshihiko Takeuchi ,  Kosei Noda

    IPC: H01L29/04

    CPC classification number: H01L29/04 ,  H01L29/4908 ,  H01L29/78618

    Abstract: To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed.

    Abstract translation: 提供能够抑制氧化物半导体薄膜中的氧空位的产生的半导体元件。 半导体元件具有这样的结构，其中在栅极绝缘膜中，与栅电极不重叠的区域的氮含量高于与栅电极重叠的区域的氮含量。 氮化物膜具有防止杂质扩散的优异性能; 因此，通过该结构，可以有效地抑制氧化物半导体膜中的氧，特别是沟道形成区域中的氧向半导体元件的外部的释放。

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