知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

35 records (took 0.024 seconds)

    ARCHITECTURES FOR DATA ANALYTICS USING COMPUTATIONAL NAND MEMORY
    5.
    发明申请
    ARCHITECTURES FOR DATA ANALYTICS USING COMPUTATIONAL NAND MEMORY 有权
    使用计算NAND存储器进行数据分析的架构

    公开(公告)号：US20140136761A1

    公开(公告)日：2014-05-15

    申请号：US13827407

    申请日：2013-03-14

    Applicant: SANDISK TECHNOLOGIES INC.

    Inventor： Yan Li ,  John R. Busch ,  Steven T. Sprouse

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G06F9/5072 ,  G11C11/5642 ,  G11C15/046 ,  G11C16/0483 ,  G11C16/3459 ,  G11C2213/75

    Abstract: A data analytic system allows for analytic operations be moved from a server on to a solid state drive (SSD) type analytic system, where a CAM NAND structure can be used in the analytic operations. The server can run a software using database language can issue command to the analytic system. On the data analytic system (that can interface with common, existing database language), the software commands are translated into firmware language and broken down into multiple small tasks. The small tasks are executed on the SSD flash controllers or on NAND flash according to the task specifications. The mid-product from the NAND flash or the SSD controllers can be merged within each SSD blade and also further merged on the top server level.

    Abstract translation: 数据分析系统允许分析操作从服务器移动到固态驱动器（SSD）类型分析系统，其中可以在分析操作中使用CAM NAND结构。 服务器可以使用数据库语言运行软件，可以向分析系统发出命令。 在数据分析系统（可以与常见的现有数据库语言接口）上，将软件命令转换为固件语言，并分解成多个小型任务。 小型任务根据任务规格在SSD闪存控制器或NAND闪存上执行。 来自NAND闪存或SSD控制器的中间产品可以在每个SSD刀片中合并，并进一步合并在顶级服务器级别上。

    Key-Value Addressed Storage Drive Using NAND Flash Based Content Addressable Memory
    6.
    发明申请
    Key-Value Addressed Storage Drive Using NAND Flash Based Content Addressable Memory 有权
    使用基于NAND Flash的内容可寻址内存的关键价值存储驱动器

    公开(公告)号：US20140133228A1

    公开(公告)日：2014-05-15

    申请号：US13749432

    申请日：2013-01-24

    Applicant: SANDISK TECHNOLOGIES INC.

    Inventor： Steven T. Sprouse ,  Yan Li

    IPC: G11C16/02

    CPC classification number: G06F12/0246 ,  G11C11/5642 ,  G11C15/046 ,  G11C16/02 ,  G11C16/0483 ,  G11C16/3459 ,  G11C2211/5641 ,  G11C2211/5642 ,  G11C2213/71 ,  G11C2213/75

    Abstract: A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host.

    Abstract translation: 基于NAND Flash的内容可寻址存储器（CAM）用于键值寻址存储驱动器。 该设备可以使用标准传输协议，如PCI-E，SAS，SATA，eMMC，SCSI等。 主机向驱动器写入键值对，驱动器将驱动器沿着驱动器的CAM NAND部分的位线写入键，并将该值存储在驱动器中。 然后，驱动器维护将键链接到值的位置的表。 在读取过程中，主机提供驱动键，然后将存储键的块的字线广播下来。 基于任何匹配的位线，然后可以使用表来检索并将相应的数据提供给主机。

    Weighted Read Scrub for Nonvolatile Memory
    7.
    发明申请
    Weighted Read Scrub for Nonvolatile Memory 有权
    用于非易失性存储器的加权读取擦除

    公开(公告)号：US20160026410A1

    公开(公告)日：2016-01-28

    申请号：US14861953

    申请日：2015-09-22

    Applicant: SanDisk Technologies Inc.

    Inventor： Chris Avila ,  Yingda Dong ,  Alexander Kwok-Tung Mak ,  Steven T. Sprouse

    IPC: G06F3/06

    CPC classification number: G06F3/0652 ,  G06F3/0619 ,  G06F3/0679 ,  G06F11/106 ,  G11C16/04

    Abstract: In a nonvolatile memory array, such as a three-dimensional array of charge-storage memory cells, data is scrubbed according to a scheme which weights particular data that is exposed to potentially damaging voltages. Data that may cause damage to other data is moved to a location where such potential damage is reduced.

    Abstract translation: 在诸如电荷存储存储器单元的三维阵列的非易失性存储器阵列中，根据对暴露于潜在有害电压的特定数据进行加权的方案来擦除数据。 可能导致其他数据损坏的数据被移动到这种潜在损害减少的位置。

    Systems and Methods for Lower Page Writes
    8.
    发明申请
    Systems and Methods for Lower Page Writes 有权
    较低页面写入的系统和方法

    公开(公告)号：US20150332759A1

    公开(公告)日：2015-11-19

    申请号：US14528892

    申请日：2014-10-30

    Applicant: SanDisk Technologies Inc.

    Inventor： Jianmin Huang ,  Bo Lei ,  Jun Wan ,  Gerrit Jan Hemink ,  Steven T. Sprouse ,  Dana Lee

    IPC: G11C11/56

    CPC classification number: G11C11/5628 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/0483 ,  G11C2211/5641

    Abstract: In a Multi Level Cell (MLC) memory array block in which lower pages are written first, before any upper pages, the lower page data is subject to an exclusive OR (XOR) operation so that if any lower page becomes uncorrectable by ECC (UECC) then the page can be recovered using XOR. Lower pages in such blocks may be written in nonsequential order.

    Abstract translation: 在多级单元（MLC）存储器阵列块中，首先写入低层页面，在任何高层页面之前，下层数据进行异或（XOR）操作，以便如果任何下层页面由ECC（UECC）无法校正 ），则可以使用XOR恢复页面。 这些块中的下页可以以非顺序的顺序写入。

    NAND flash based content addressable memory
    9.
    发明授权
    NAND flash based content addressable memory 有权
    基于NAND闪存的内容可寻址内存

    公开(公告)号：US09098403B2

    公开(公告)日：2015-08-04

    申请号：US13749407

    申请日：2013-01-24

    Applicant: SanDisk Technologies Inc.

    Inventor： Steven T. Sprouse ,  Yan Li

    IPC: G11C11/00 ,  G06F12/00 ,  G06F12/02 ,  G11C11/56 ,  G11C15/04 ,  G11C16/04 ,  G11C16/34 ,  G11C16/02

    CPC classification number: G06F12/0246 ,  G11C11/5642 ,  G11C15/046 ,  G11C16/02 ,  G11C16/0483 ,  G11C16/3459 ,  G11C2211/5641 ,  G11C2211/5642 ,  G11C2213/71 ,  G11C2213/75

    Abstract: A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host.

    Abstract translation: 基于NAND Flash的内容可寻址存储器（CAM）用于键值寻址存储驱动器。 该设备可以使用标准传输协议，如PCI-E，SAS，SATA，eMMC，SCSI等。 主机向驱动器写入键值对，驱动器将驱动器沿着驱动器的CAM NAND部分的位线写入键，并将该值存储在驱动器中。 然后，驱动器维护将键链接到值的位置的表。 在读取过程中，主机提供驱动键，然后将存储键的块的字线广播下来。 基于任何匹配的位线，然后可以使用表来检索并将相应的数据提供给主机。

    Selective In-Situ Retouching of Data in Nonvolatile Memory
    10.
    发明申请
    Selective In-Situ Retouching of Data in Nonvolatile Memory 有权
    非易失性存储器中数据的选择性原位修饰

    公开(公告)号：US20150082120A1

    公开(公告)日：2015-03-19

    申请号：US14028260

    申请日：2013-09-16

    Applicant: SanDisk Technologies, Inc.

    Inventor： Nian Yang ,  Chris Avila ,  Steven T. Sprouse ,  Aaron Lee

    IPC: G06F11/10

    CPC classification number: G06F11/1048 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/3431 ,  G11C16/3459

    Abstract: In a charge-storage memory array, memory cells that are programmed to a particular threshold voltage range and have subsequently lost charge have their threshold voltages restored by selectively adding charge to the memory cells. Adding charge only to memory cells with high threshold voltage ranges may sufficiently increase threshold voltages of other memory cells so that they do not require separate addition of charge.

    Abstract translation: 在电荷存储存储器阵列中，被编程到特定阈值电压范围并随后损耗电荷的存储器单元通过选择性地将电荷加到存储器单元而恢复它们的阈值电压。 仅向具有高阈值电压范围的存储单元加电荷可充分提高其它存储单元的阈值电压，从而不需要单独添加电荷。

Patent Agency Ranking