公开(公告)号：US20170256709A1

公开(公告)日：2017-09-07

申请号：US15598605

申请日：2017-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul PARK ,  Hyungjoon KWON ,  lnho KIM ,  Jongsoon PARK

IPC: H01L43/12 ,  H01L21/3213

CPC classification number: H01L43/12 ,  H01L21/32131 ,  H01L27/1087 ,  H01L27/222 ,  H01L43/08

Abstract: A patterning method includes forming an etch-target layer on a substrate, forming mask patterns on the etch-target layer, and etching the etch-target layer using the mask patterns as an etch mask to form patterns spaced apart from each other. The etching process of the etch-target layer includes irradiating the etch-target layer with an ion beam, whose incident energy ranges from 600 eV to 10 keV. A recess region is formed in the etch-target layer between the mask patterns, and the ion beam is incident onto a bottom surface of the recess region at a first angle with respect to a top surface of the substrate and is incident onto an inner side surface of the recess region at a second angle with respect to the inner side surface of the recess region. The first angle ranges from 50° to 90° and the second angle ranges from 0° to 40°.

公开(公告)号：US20190165257A1

公开(公告)日：2019-05-30

申请号：US15970963

申请日：2018-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun LEE ,  Sang-Kuk KIM ,  Oik KWON ,  lnho KIM ,  Jongchul PARK ,  Kwangyoung OH

IPC: H01L43/08 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/1087 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device includes a lower interlayer insulating layer on a substrate, and a plurality of magnetic tunnel junction patterns on the lower interlayer insulating layer and isolated from direct contact with each other in a direction extending parallel to a top surface of the substrate. The lower interlayer insulating layer includes an upper surface including a recessed surface and a top surface, the recessed surface at least partially defining an inner sidewall and a bottom surface of a recess region between adjacent magnetic tunnel junction patterns, such that the recessed surface at least partially defines the recess region. The inner sidewall is inclined at an acute angle with respect to the top surface of the substrate, and the bottom surface has a shape that is convex toward the top surface of the substrate, in direction extending perpendicular to the top surface of the substrate.