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1.
公开(公告)号:US12123789B2
公开(公告)日:2024-10-22
申请号:US17366348
申请日:2021-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungsu Kim , Yunhyeok Im , Inhwan Baek , Dongsuk Shin
IPC: G01K7/42 , G05D23/19 , G06F1/20 , G06F1/3206 , G06F1/3296 , G06F11/30 , G06F1/28 , G06F1/3237 , G06F1/324 , G06F123/02 , G06N20/00
CPC classification number: G01K7/425 , G01K7/42 , G05D23/19 , G06F1/206 , G06F1/3206 , G06F1/3296 , G06F11/3058 , G06F1/28 , G06F1/3237 , G06F1/324 , G06F11/3062 , G06F2123/02 , G06N20/00 , Y02D10/00
Abstract: The present disclosure provides a device and methods to control a temperature of an integrated circuit (IC). For example, a device may include a circuit (e.g., an IC), a power monitor, a temperature sensor, and a controller. In some examples, temperature may be estimated based on power measured by a dynamic power monitor (DPM). In some cases, the estimated temperatures may be corrected based on temperature sensed by a temperature sensor on the IC. The power may be measured in shorter time periods and/or more frequent time periods compared to a time periods that the temperature sensor senses temperature. Accordingly, the temperature of an IC may be detected and adjusted more frequently based on the power measurements, and the temperature estimates may be adjusted for accuracy based on sensed temperatures.
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2.
公开(公告)号:US20220136909A1
公开(公告)日:2022-05-05
申请号:US17366348
申请日:2021-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungsu Kim , Yunhyeok Im , Inhwan Baek , Dongsuk Shin
IPC: G01K7/42 , G06F1/20 , G06F1/3206 , G06F1/3296
Abstract: The present disclosure provides a device and methods to control a temperature of an integrated circuit (IC). For example, a device may include a circuit (e.g., an IC), a power monitor, a temperature sensor, and a controller. In some examples, temperature may be estimated based on power measured by a dynamic power monitor (DPM). In some cases, the estimated temperatures may be corrected based on temperature sensed by a temperature sensor on the IC. The power may be measured in shorter time periods and/or more frequent time periods compared to a time periods that the temperature sensor senses temperature. Accordingly, the temperature of an IC may be detected and adjusted more frequently based on the power measurements, and the temperature estimates may be adjusted for accuracy based on sensed temperatures.
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公开(公告)号:US11908774B2
公开(公告)日:2024-02-20
申请号:US17850504
申请日:2022-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Heeseok Lee , Yunhyeok Im
IPC: H01L23/48 , H01L23/498 , H01L23/31 , H01L25/10 , H01L23/40
CPC classification number: H01L23/481 , H01L23/3135 , H01L23/498 , H01L25/105 , H01L2023/4087 , H01L2225/1011 , H01L2225/1041
Abstract: A semiconductor package includes; a lower semiconductor chip mounted on a lower package substrate, an interposer on the lower package substrate and including an opening, connection terminals spaced apart from and at least partially surrounding the lower semiconductor chip and extending between the lower package substrate and the interposer, a first molding member including a first material and covering at least a portion of a top surface of the lower semiconductor chip and at least portions of edge surfaces of the lower semiconductor chip, wherein the first molding member includes a protrusion that extends upward from the opening to cover at least portions of a top surface of the interposer proximate to the opening, and a second molding member including a second material, at least partially surrounding the first molding member, and covering side surfaces of the first molding member and the connection terminals, wherein the first material has thermal conductivity greater than the second material.
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公开(公告)号:US10665574B2
公开(公告)日:2020-05-26
申请号:US16056709
申请日:2018-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yunhyeok Im , Kyoung-Min Lee , Kyungsoo Lee , Horang Jang
IPC: H01L23/367 , H01L23/42 , H01L25/10 , H01L23/498 , H01L23/552 , H01L23/538 , H01L23/00
Abstract: A semiconductor package includes a bottom package having a lower substrate and a lower semiconductor chip mounted on the lower substrate, an interposer substrate on the bottom package, a first top package and a second top package that are mounted on the interposer substrate, and a heat spreader that is interposed between the first top package and the second top package and separates the first and second top packages from each other. The heat spreader is adhered to the interposer substrate through a plurality of first connection terminals.
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公开(公告)号:US11502061B2
公开(公告)日:2022-11-15
申请号:US16592897
申请日:2019-10-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngsang Cho , Heeseok Lee , Yunhyeok Im , Moonseob Jeong
IPC: H01L25/065 , H01L23/538 , H01L23/498 , H01L23/31
Abstract: A semiconductor package includes a package substrate, a lower semiconductor chip on the package substrate, an interposer on the lower semiconductor chip, the interposer including a plurality of pieces spaced apart from each other, an upper semiconductor chip on the interposer, and a molding member covering the lower semiconductor chip and the interposer.
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公开(公告)号:US20180269126A1
公开(公告)日:2018-09-20
申请号:US15983125
申请日:2018-05-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yunhyeok Im , Oleg Feygenson , Sang Il Kim , Youngbae Kim , Jichul Kim , Seungkon Mok , Jungsu Ha
IPC: H01L23/367 , H01L23/373 , H01L25/00 , H01L23/552 , H01L23/00 , H01L29/06 , H01L21/56 , H01L25/10 , H01L23/498
CPC classification number: H01L23/367 , H01L21/4871 , H01L21/563 , H01L23/36 , H01L23/3736 , H01L23/49816 , H01L23/552 , H01L23/562 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/92 , H01L25/105 , H01L25/50 , H01L29/0657 , H01L2224/13025 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/92125 , H01L2225/1023 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/10158 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/18161 , H01L2924/3025 , H01L2924/3511 , H01L2924/00012 , H01L2924/00
Abstract: Semiconductor packages and methods of fabricating the same are disclosed. The semiconductor package may include a package substrate, a semiconductor chip, which is mounted on the package substrate to have a bottom surface facing the package substrate and a top surface opposite to the bottom surface, a mold layer provided on the package substrate to encapsulate the semiconductor chip, and a heat dissipation layer provided on the top surface of the semiconductor chip. The mold layer may have a top surface substantially coplanar with the top surface of the semiconductor chip, and the top surfaces of the semiconductor chip and the mold layer may have a difference in surface roughness from each other.
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公开(公告)号:US09190338B2
公开(公告)日:2015-11-17
申请号:US14188917
申请日:2014-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyol Park , Yunhyeok Im , Eon Soo Jang
IPC: H01L23/34 , H01L23/16 , H01L23/31 , H01L23/427 , H01L23/433 , H01L25/065 , H01L23/38
CPC classification number: H01L23/16 , H01L23/3128 , H01L23/38 , H01L23/4275 , H01L23/4334 , H01L25/0657 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/00
Abstract: A semiconductor package includes a substrate. A lower semiconductor chip is disposed above the substrate. An upper semiconductor chip is disposed on the lower semiconductor chip. A top surface of the lower semiconductor chip at an end of the lower semiconductor chip is exposed. A heat slug disposed above the upper semiconductor chip. A molding layer is disposed between the substrate and the heat slug. The molding layer is configured to seal the lower semiconductor chip and the upper semiconductor chip. An upper spacer is disposed between the lower semiconductor chip and the heat slug. The upper spacer is disposed on the exposed surface of the lower semiconductor chip.
Abstract translation: 半导体封装包括衬底。 下半导体芯片设置在基板上方。 上半导体芯片设置在下半导体芯片上。 在下半导体芯片的一端的下半导体芯片的顶表面被暴露。 设置在上半导体芯片上方的散热片。 模制层设置在基板和热块之间。 模制层被配置为密封下半导体芯片和上半导体芯片。 上部间隔件设置在下部半导体芯片和热塞之间。 上隔板设置在下半导体芯片的暴露表面上。
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8.
公开(公告)号:US20140353813A1
公开(公告)日:2014-12-04
申请号:US14188917
申请日:2014-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyol Park , Yunhyeok Im , Eon Soo Jang
IPC: H01L23/34
CPC classification number: H01L23/16 , H01L23/3128 , H01L23/38 , H01L23/4275 , H01L23/4334 , H01L25/0657 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/00
Abstract: A semiconductor package includes a substrate. A lower semiconductor chip is disposed above the substrate. An upper semiconductor chip is disposed on the lower semiconductor chip. A top surface of the lower semiconductor chip at an end of the lower semiconductor chip is exposed. A heat slug disposed above the upper semiconductor chip. A molding layer is disposed between the substrate and the heat slug. The molding layer is configured to seal the lower semiconductor chip and the upper semiconductor chip. An upper spacer is disposed between the lower semiconductor chip and the heat slug. The upper spacer is disposed on the exposed surface of the lower semiconductor chip.
Abstract translation: 半导体封装包括衬底。 下半导体芯片设置在基板上方。 上半导体芯片设置在下半导体芯片上。 在下半导体芯片的一端的下半导体芯片的顶表面被暴露。 设置在上半导体芯片上方的散热片。 模制层设置在基板和热块之间。 模制层被配置为密封下半导体芯片和上半导体芯片。 上部间隔件设置在下部半导体芯片和热塞之间。 上隔板设置在下半导体芯片的暴露表面上。
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公开(公告)号:US20230290701A1
公开(公告)日:2023-09-14
申请号:US18052187
申请日:2022-11-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yunhyeok Im , Youngsang Cho
IPC: H01L23/367 , H01L23/31 , H01L23/373 , H01L23/498
CPC classification number: H01L23/367 , H01L23/3128 , H01L23/3736 , H01L23/49811 , H01L23/49822 , H01L24/16 , H01L2224/16227
Abstract: A semiconductor package includes a first substrate, a semiconductor chip disposed on the first substrate, a mold layer disposed on the first substrate and at least partially covering the semiconductor chip, and a heat dissipation structure disposed on a first top surface of the semiconductor chip and in the mold layer. The heat dissipation structure covers an inner side surface of the mold layer. A surface roughness of the first top surface of the semiconductor chip is greater than a surface roughness of a side surface of the semiconductor chip, and a surface roughness of the inner side surface of the mold layer is greater than a surface roughness of a top surface of the mold layer. The heat dissipation structure includes voids therein.
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公开(公告)号:US11251102B2
公开(公告)日:2022-02-15
申请号:US17030092
申请日:2020-09-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yunhyeok Im , Youngsang Cho
IPC: H01L23/36 , H01L23/498 , H01L23/00
Abstract: A semiconductor module may include a substrate including a first region and a second region, a first chip mounted in the first region, a second chip and passive devices mounted in the second region, and a heat dissipation layer being in contact with a top surface of the first chip. The heat dissipation layer may be provided on top surfaces and side surfaces of the first chip, the second chip and the passive devices.
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