公开(公告)号：US09130066B2

公开(公告)日：2015-09-08

申请号：US13865491

申请日：2013-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Hwang ,  Sang Il Kim ,  Byung Ki Ryu ,  Kyung Han Ahn

IPC: H01L35/00 ,  C01B19/00 ,  H01L35/16

CPC classification number: H01L35/00 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/52 ,  C01P2006/40 ,  H01L35/16

Abstract: A thermoelectric material including a compound represented by Chemical Formula 1 MxCuyBi2-x(Te1-zSez)3  (1) wherein in the Chemical Formula, M is at least one metal element, and x, y, and z independently satisfy the following ranges 0

Abstract translation: 包含由化学式1 MxCuyBi2-x（Te1-zSez）3（1）表示的化合物的热电材料其中在化学式中，M为至少一种金属元素，x，y和z分别满足以下范围0

公开(公告)号：US10138125B2

公开(公告)日：2018-11-27

申请号：US14732951

申请日：2015-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Il Kim ,  Se Yun Kim ,  Kyoung-Seok Moon ,  Sung Woo Hwang ,  Yoon Chul Son ,  Hyosug Lee

IPC: C01B19/04 ,  C03C17/10 ,  C30B29/46 ,  H01B1/02 ,  H01B1/06

Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: M1Te2  Chemical Formula 1 wherein M1 is titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), tantalum (Ta), or niobium (Nb); and M2Se2  Chemical Formula 2 wherein M2 is vanadium (V) or tantalum (Ta).

公开(公告)号：US09981850B2

公开(公告)日：2018-05-29

申请号：US14719428

申请日：2015-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Seok Moon ,  Sang Il Kim ,  Se Yun Kim ,  Hee Jung Park ,  Hyosug Lee ,  Jae-Young Choi

IPC: C01B19/04 ,  C01B19/00 ,  H01L21/02 ,  H01B1/06

CPC classification number: C01B19/007 ,  C01B19/04 ,  C01P2006/40 ,  H01B1/06 ,  H01L21/02562 ,  Y02E10/50 ,  Y02E10/54

Abstract: An electrically conductive film including a compound represented by Chemical Formula 1 and having a layered crystal structure: MeCh2  Chemical Formula 1 wherein, Me is Ru, Os, Re, Rh, Ir, Pd, Pt, Cu, Ag, or Au, and Ch is sulfur, selenium, tellurium, or a combination thereof.

公开(公告)号：US09837179B2

公开(公告)日：2017-12-05

申请号：US14940223

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kimoon Lee ,  Sang Il Kim ,  Se Yun Kim ,  Sung Woo Hwang ,  Woojin Lee ,  Hee Jung Park ,  Yoon Chul Son ,  Hyosug Lee ,  Doh Won Jung ,  Youngjin Cho ,  Jae-Young Choi

IPC: H01B1/02 ,  H01B1/06 ,  C30B29/60 ,  C30B7/00 ,  C01B19/00 ,  C30B29/46 ,  H01L21/02

CPC classification number: H01B1/02 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/20 ,  C01P2002/30 ,  C01P2002/90 ,  C30B7/00 ,  C30B29/46 ,  C30B29/60 ,  C30B29/605 ,  C30B29/607 ,  H01B1/06 ,  H01L21/02417 ,  H01L21/02573 ,  H01L21/02609

Abstract: An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa  Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.

公开(公告)号：US09767936B2

公开(公告)日：2017-09-19

申请号：US14740583

申请日：2015-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwoo Hwang ,  Kimoon Lee ,  Doh Won Jung ,  Sang Il Kim ,  Kyoung-Seok Moon ,  Woojin Lee

IPC: H01B1/02 ,  C01B19/00 ,  C01B19/02 ,  C04B35/547

CPC classification number: H01B1/02 ,  C01B19/002 ,  C01B19/02 ,  C01P2002/72 ,  C01P2004/24 ,  C01P2006/40 ,  C01P2006/60 ,  C04B35/547 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/408 ,  C04B2235/42 ,  C04B2235/428 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/662 ,  C04B2235/76

Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure: AxMyChz  Chemical Formula 1 wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.

公开(公告)号：US10266407B2

公开(公告)日：2019-04-23

申请号：US14703237

申请日：2015-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Yun Kim ,  Sang Il Kim ,  Sung Woo Hwang ,  Yoon Chul Son ,  Yong-Hee Cho ,  Jae-Young Choi

IPC: C01B19/00 ,  H01B1/06 ,  C30B29/46 ,  C23C14/06 ,  C23C14/28 ,  H01B1/00

Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure MeCha  Chemical Formula 1 wherein, Me is Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu; Ch is sulfur, selenium, or tellurium; and a is an integer ranging from 1 to 3.

公开(公告)号：US20180269126A1

公开(公告)日：2018-09-20

申请号：US15983125

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunhyeok Im ,  Oleg Feygenson ,  Sang Il Kim ,  Youngbae Kim ,  Jichul Kim ,  Seungkon Mok ,  Jungsu Ha

IPC: H01L23/367 ,  H01L23/373 ,  H01L25/00 ,  H01L23/552 ,  H01L23/00 ,  H01L29/06 ,  H01L21/56 ,  H01L25/10 ,  H01L23/498

CPC classification number: H01L23/367 ,  H01L21/4871 ,  H01L21/563 ,  H01L23/36 ,  H01L23/3736 ,  H01L23/49816 ,  H01L23/552 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L25/105 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/92125 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Semiconductor packages and methods of fabricating the same are disclosed. The semiconductor package may include a package substrate, a semiconductor chip, which is mounted on the package substrate to have a bottom surface facing the package substrate and a top surface opposite to the bottom surface, a mold layer provided on the package substrate to encapsulate the semiconductor chip, and a heat dissipation layer provided on the top surface of the semiconductor chip. The mold layer may have a top surface substantially coplanar with the top surface of the semiconductor chip, and the top surfaces of the semiconductor chip and the mold layer may have a difference in surface roughness from each other.

公开(公告)号：US09459315B2

公开(公告)日：2016-10-04

申请号：US14217911

申请日：2014-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Won Han ,  Sang Il Kim

IPC: G01R31/28 ,  H01L21/673 ,  H01L21/68

CPC classification number: G01R31/2893 ,  H01L21/67333 ,  H01L21/68

Abstract: A tray for aligning semiconductor packages, a test handler using the same, a method of aligning the semiconductor packages, and a test method using the same include a tray main body comprising a plurality of package pocket portions at which a plurality of semiconductor packages are individually received and an air position-aligning unit coupled to the tray main body. The air position-aligning unit applies air having a preset pressure to the semiconductor package received at the package pocket portion. The semiconductor package is aligned at the package pocket portion.

Abstract translation: 用于对准半导体封装的托盘，使用该托盘的测试处理器，对准半导体封装的方法以及使用其的测试方法包括托盘主体，其包括多个封装袋部分，多个半导体封装单独 接收的空气调节单元和与盘主体相连的空气调节单元。 空气位置对齐单元将具有预设压力的空气施加到在包装袋部分处接收的半导体封装。 半导体封装在封装袋部分对准。