公开(公告)号：US10741737B2

公开(公告)日：2020-08-11

申请号：US16018542

申请日：2018-06-26

申请人： Samsung Electronics Co., Ltd.

发明人： Mi Hyun Kim ,  Young Hwan Park ,  Sam Mook Kang ,  Joo Sung Kim ,  Jong Uk Seo ,  Young Jo Tak

IPC分类号： H01L33/62 ,  H01L33/64 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60

摘要： A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

公开(公告)号：US11569417B2

公开(公告)日：2023-01-31

申请号：US17720923

申请日：2022-04-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young Jo Tak ,  Joo Sung Kim ,  Jong Uk Seo ,  Dong Gun Lee ,  Yong Il Kim

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/52

摘要： A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

公开(公告)号：US09947530B2

公开(公告)日：2018-04-17

申请号：US15399898

申请日：2017-01-06

申请人： Samsung Electronics Co., Ltd.

发明人： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Jun Youn Kim ,  Young Soo Park

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/0254 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/304 ,  H01L21/30604

摘要： A method of manufacturing a nitride semiconductor substrate includes providing a silicon substrate having a first surface and a second surface opposing each other, growing a nitride template on the first surface of the silicon substrate in a first growth chamber, in which a silicon compound layer is formed on the second surface of the silicon substrate in a growth process of the nitride template, removing the silicon compound layer from the second surface of the silicon substrate, growing a group III nitride single crystal on the nitride template in a second growth chamber, and removing the silicon substrate from the second growth chamber.

公开(公告)号：US09899565B2

公开(公告)日：2018-02-20

申请号：US15183869

申请日：2016-06-16

申请人： Samsung Electronics Co., Ltd.

发明人： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Jun Youn Kim ,  Young Soo Park ,  Misaichi Takeuchi

IPC分类号： H01L33/00 ,  H01L21/683 ,  H01L21/306 ,  H01L21/78 ,  H01L21/02

CPC分类号： H01L33/0075 ,  H01L21/02005 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7806 ,  H01L33/0066 ,  H01L33/0079

摘要： A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.

公开(公告)号：US10784405B2

公开(公告)日：2020-09-22

申请号：US16038368

申请日：2018-07-18

申请人： Samsung Electronics Co., Ltd.

发明人： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Joo Sung Kim ,  Young Hwan Park ,  Jong Uk Seo

IPC分类号： H01L33/32 ,  H01L33/12 ,  H01L33/04 ,  H01L33/20 ,  H01L33/40 ,  H01L33/10

摘要： A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

公开(公告)号：US20190207057A1

公开(公告)日：2019-07-04

申请号：US16032222

申请日：2018-07-11

申请人： Samsung Electronics Co., Ltd

发明人： Sam Mook Kang ,  Joo Sung Kim ,  Jong Uk Seo ,  Young Jo Tak

IPC分类号： H01L33/00 ,  H01L33/12

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/12 ,  H01L33/22

摘要： A method of manufacturing a semiconductor light emitting device may include: forming a buffer layer on a substrate; forming a protective layer on the buffer layer; performing heat treatment on a stacked structure of the substrate, the buffer layer, and the protective layer; removing the protective layer; and forming a light emitting structure on the buffer layer.

公开(公告)号：US10600645B2

公开(公告)日：2020-03-24

申请号：US15662425

申请日：2017-07-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Mi Hyun Kim ,  Sam Mook Kang ,  Jun Youn Kim ,  Young Jo Tak

IPC分类号： H01L21/02 ,  C30B25/18 ,  C30B25/04 ,  C30B25/02 ,  C30B29/40 ,  H01L21/78 ,  B08B3/02 ,  B08B3/12

摘要： A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a GaN layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.

公开(公告)号：US10483433B2

公开(公告)日：2019-11-19

申请号：US16051684

申请日：2018-08-01

申请人： Samsung Electronics Co., Ltd.

发明人： Young Hwan Park ,  Joo Sung Kim ,  Young Jo Tak

IPC分类号： H01L33/20 ,  H01L33/32 ,  H01L33/14 ,  H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/40

摘要： An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively.

公开(公告)号：US09666754B2

公开(公告)日：2017-05-30

申请号：US15130379

申请日：2016-04-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young Hwan Park ,  Sam Mook Kang ,  Jun Youn Kim ,  Mi Hyun Kim ,  Joo Sung Kim ,  Young Jo Tak

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L33/00 ,  H01L33/12

CPC分类号： H01L33/007 ,  F21K9/237 ,  F21K9/275 ,  F21S41/141 ,  F21S43/14 ,  F21V23/005 ,  F21Y2113/10 ,  F21Y2115/10 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L33/12 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.