公开(公告)号：US20190355719A1

公开(公告)日：2019-11-21

申请号：US16372166

申请日：2019-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu MAEDA ,  Sung Chul PARK ,  Chul Hong PARK ,  Yoshinao HARADA ,  Sung Min KANG ,  Ji Wook KWON ,  Ha-Young KIM ,  Yuichi HIRANO

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/40

Abstract: A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.

公开(公告)号：US20150097250A1

公开(公告)日：2015-04-09

申请号：US14327666

申请日：2014-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keon-Yong CHEON ,  Jun-suk CHOI ,  Han-Su OH ,  Yoshinao HARADA

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L27/0886 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: Provided is a semiconductor device, which includes a first fin on a substrate, a first gate insulating layer including a first trench disposed on the first fin, a first work function adjusting layer in the first trench, a first barrier layer covering a top surface of the first work function adjusting layer; and an interlayer insulating layer on the first barrier layer.

Abstract translation: 提供了一种半导体器件，其包括在衬底上的第一鳍状物，第一栅极绝缘层，包括设置在第一鳍片上的第一沟槽，第一沟槽中的第一功函数调节层，覆盖第一鳍状物的顶表面的第一势垒层 第一功能调整层; 和在第一阻挡层上的层间绝缘层。