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公开(公告)号：US09343660B2
公开(公告)日：2016-05-17
申请号：US14583831
申请日：2014-12-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
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公开(公告)号：US09048417B2
公开(公告)日：2015-06-02
申请号：US14464835
申请日：2014-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Abstract translation: 提供磁存储器件。 所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。
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Patent Agency Ranking
公开(公告)号：US11127786B2
公开(公告)日：2021-09-21
申请号：US16556599
申请日：2019-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joonmyoung Lee , Whankyun Kim , Jeong-Heon Park , Woo Chang Lim , Junho Jeong
Abstract: Disclosed is a magnetic memory device including a line pattern on a substrate, a magnetic tunnel junction pattern on the line pattern, and an upper conductive line that is spaced apart from the line pattern across the magnetic tunnel junction pattern and is connected to the magnetic tunnel junction pattern. The line pattern provides the magnetic tunnel junction pattern with spin-orbit torque. The line pattern includes a chalcogen-based topological insulator.
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公开(公告)号：US10734051B2
公开(公告)日：2020-08-04
申请号：US16591683
申请日：2019-10-03
Inventor： Woo Chang Lim , Kyung-Jin Lee , Gyungchoon Go , Seung-Jae Lee
Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.
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公开(公告)号：US08847341B2
公开(公告)日：2014-09-30
申请号：US13926048
申请日：2013-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层，第一垂直磁性层和第二垂直磁性层之间的隧道势垒层，以及在第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。
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公开(公告)号：US10482939B2
公开(公告)日：2019-11-19
申请号：US15822877
申请日：2017-11-27
Inventor： Woo Chang Lim , Kyung-Jin Lee , Gyungchoon Go , Seung-Jae Lee
Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.
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公开(公告)号：US09859333B2
公开(公告)日：2018-01-02
申请号：US15284519
申请日：2016-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woojin Kim , Ki Woong Kim , Woo Chang Lim
CPC classification number: H01L27/222 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.
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