公开(公告)号：US09991126B2

公开(公告)日：2018-06-05

申请号：US15447969

申请日：2017-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Sik Park ,  Won-Chul Lee

IPC: H01L21/30 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L29/34

CPC classification number: H01L21/3003 ,  H01L21/76816 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L27/10894 ,  H01L28/90 ,  H01L29/34

Abstract: A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on the substrate and including a first wire and a second wire; a second level layer disposed on the substrate at a different level from the first level layer and including a third wire; an interlayer insulating layer disposed between the first level layer and the second level layer; a diffusion prevention layer contacting the third wire; a contact plug penetrating the interlayer insulating layer and electrically connecting the second wire to the third wire; and a dummy contact plug penetrating the interlayer insulating layer. The dummy contact plug contacts the first and second level layers, is spaced apart from the diffusion prevention layer, and is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer.

公开(公告)号：US20170256411A1

公开(公告)日：2017-09-07

申请号：US15447969

申请日：2017-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-SIK PARK ,  Won-Chul Lee

IPC: H01L21/30 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L29/34

CPC classification number: H01L21/3003 ,  H01L21/76816 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L27/10894 ,  H01L28/90 ,  H01L29/34

Abstract: A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on the substrate and including a first wire and a second wire; a second level layer disposed on the substrate at a different level from the first level layer and including a third wire; an interlayer insulating layer disposed between the first level layer and the second level layer; a diffusion prevention layer contacting the third wire; a contact plug penetrating the interlayer insulating layer and electrically connecting the second wire to the third wire; and a dummy contact plug penetrating the interlayer insulating layer. The dummy contact plug contacts the first and second level layers, is spaced apart from the diffusion prevention layer, and is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer.

公开(公告)号：US08878293B2

公开(公告)日：2014-11-04

申请号：US13767992

申请日：2013-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-Woo Jang ,  Won-Chul Lee ,  Jin-Won Jeong

IPC: H01L29/66 ,  H01L23/538 ,  H01L27/088

CPC classification number: H01L23/5384 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/088 ,  H01L27/10876 ,  H01L27/10879 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the substrate, the DC structure including a DC hole exposing the substrate, an insulating DC spacer on an inner wall of the DC hole, and a conductive DC plug on the DC spacer and filling the DC hole, the DC plug including a lower DC plug and an upper DC plug on the lower DC plug, the lower DC plug having a smaller horizontal width than that of the upper DC plug.

Abstract translation: 半导体器件包括在基板上的层间绝缘层和垂直穿过层间绝缘层并与基板接触的直接接触（DC）结构，包括露出基板的DC孔的DC结构，内壁上的绝缘DC间隔物 DC直流插头和直流隔离件上的导电直流插头，并填充直流孔，直流插头包括下直流插头的下部直流插头和上部直流插头，下部直流插头的水平宽度小于 的上部直流插头。