公开(公告)号：US20210159086A1

公开(公告)日：2021-05-27

申请号：US16928548

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taisoo LIM ,  Kyungwook PARK ,  Wangyup RYU ,  Keun LEE ,  Changwoo LEE ,  Hauk HAN

IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/673

Abstract: A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.

公开(公告)号：US20220037351A1

公开(公告)日：2022-02-03

申请号：US17206277

申请日：2021-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonggil LEE ,  Taisoo LIM ,  Hauk HAN

IPC: H01L27/11575 ,  H01L21/768 ,  H01L23/535 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes circuit elements on a first substrate; gate electrodes on a second substrate and stacked to be apart from each other in a first direction; sacrificial insulating layers on a lower through-insulating layer penetrating the second substrate, stacked to be spaced apart from each other in the first direction, and having side surfaces opposing the gate electrodes; channel structures penetrating the gate electrodes, extending vertically on the second substrate, and including a channel layer; a first separation pattern penetrating the gate electrodes and including a first barrier pattern and a first pattern portion extending from the first barrier pattern in a second direction; and a second separation pattern penetrating the gate electrodes, disposed to be parallel to the first separation pattern, and extending in the second direction. Some of the side surfaces of the sacrificial insulating layers may overlap the first barrier pattern in a third direction.

公开(公告)号：US20210151461A1

公开(公告)日：2021-05-20

申请号：US16993345

申请日：2020-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunil SHIM ,  Suhyeong LEE ,  Taisoo LIM

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/423 ,  H01L21/28 ,  H01L27/1157

Abstract: A semiconductor device includes gate layers stacked on a substrate in a first direction perpendicular to an upper surface of the substrate, and channel structures penetrating the gate layers and extending in the first direction, each of the channel structures includes first dielectric layers on side surfaces of the gate layers, respectively, and spaced apart from each other in the first direction, electric charge storage layers on side surfaces of the first dielectric layers, respectively, and spaced apart from each other in the first direction, a second dielectric layer extending perpendicularly to the substrate to conform to side surfaces of the electric change storage layers, and a channel layer extending perpendicularly, and each of the first dielectric layers has a first maximum length, and each of the electric charge storage layers has a second maximum length greater than the first maximum length in the first direction.