Magnetoresistive random access memory device and method of manufacturing the same

    公开(公告)号:US10008539B2

    公开(公告)日:2018-06-26

    申请号:US15234257

    申请日:2016-08-11

    CPC classification number: H01L27/228 G11C11/1655 G11C11/1659

    Abstract: A magnetoresistive random access memory (MRAM) device including a substrate including a plurality of active patterns arranged along a first direction, each of the active patterns extending in a diagonal direction with respect to the first direction; a plurality of gate structures on the substrate, the gate structures extending in a second direction substantially perpendicular to the first direction; a source line structure electrically connected to source regions of the respective active patterns, the source line structure extending in the first direction; a plurality of magnetic tunnel junction (MTJ) structures electrically connected to drain regions of the respective active patterns, the MTJ structures being spaced apart from each other; and a bit line structure electrically connected to the MTJ structures in respective memory cells, the memory cells sharing with the source line structure.

Patent Agency Ranking