公开(公告)号：US20200176292A1

公开(公告)日：2020-06-04

申请号：US16532920

申请日：2019-08-06

Applicant: Samsung Electronics Co,Ltd.

Inventor： Sung Yoon RYU ,  Joonseo SONG ,  Souk KIM ,  Younghoon SOHN ,  Yusin YANG ,  Chihoon LEE

IPC: H01L21/67 ,  G01B11/24 ,  G06T7/00

Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.

公开(公告)号：US20250123243A1

公开(公告)日：2025-04-17

申请号：US18670118

申请日：2024-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Bo SHIM ,  Souk KIM ,  Younghoon SOHN ,  Jaeho KIM ,  Inseok PARK ,  Jaewon YANG ,  Minho RIM

IPC: G01N29/04 ,  G01N29/24

Abstract: A semiconductor substrate inspection device is provided and includes: a function generator that generates a first signal and a second signal; an ultrasonic generator that receives the first signal generated from the function generator, generates an ultrasonic wave based on the first signal, and generates a surface wave signal on an upper surface of a substrate using the ultrasonic wave; and an electron beam measurer that inspects the surface wave signal, wherein the electron beam measurer includes: a laser light source that receives the second signal generated from the function generator and generates a first pulse laser beam based on the second signal; an electron beam generator that receives the first pulse laser beam and generates an electron beam that is emitted onto the upper surface of the substrate; and a backscattered electron detector that detects backscattered electrons generated based on the electron beam being incident on the substrate.

公开(公告)号：US20230154804A1

公开(公告)日：2023-05-18

申请号：US17895486

申请日：2022-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho KIM ,  Souk KIM ,  Younghoon SOHN

IPC: H01L21/66 ,  H01L27/11582 ,  H01L27/11565 ,  G01J3/18

CPC classification number: H01L22/12 ,  H01L27/11582 ,  H01L27/11565 ,  G01J3/18 ,  G02B5/18

Abstract: A spectroscopic device may include a light source part configured to emit a first light toward a target object, the light source part including a main light source and a plurality of auxiliary light sources, a diffraction part including a diffraction grating configured to diffract a second light that is produced based on the first light being reflected from the target object, the diffraction grating configured to produce a third light that is the diffracted second light, a detection part configured to detect the third light, and an analyzing part connected to the detection part. The detection part may include a plurality of pixels and an actuator. The plurality of auxiliary light sources may be configured to emit light rays of different wavelengths. The actuator may be configured to rotate and move the detection part.

公开(公告)号：US20160027707A1

公开(公告)日：2016-01-28

申请号：US14794813

申请日：2015-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yoon RYU ,  WOOSEOK KO ,  Souk KIM ,  Yusin YANG ,  SANGKIL LEE ,  CHUNGSAM JUN ,  Kwanwoo RYU

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L21/67173 ,  H01L22/20

Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

Abstract translation: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中，对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析，确定是否满足形成第一层和/或图案所引起的参数。

公开(公告)号：US20240248051A1

公开(公告)日：2024-07-25

申请号：US18458565

申请日：2023-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyung AHN ,  Inseok PARK ,  Joonseo SONG ,  Souk KIM ,  Younghoon SOHN

IPC: G01N23/2251 ,  G06T7/00 ,  G06T7/80

CPC classification number: G01N23/2251 ,  G06T7/0004 ,  G06T7/80 ,  G01N2223/303 ,  G01N2223/401 ,  G01N2223/6116 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A wafer measurement apparatus includes an electronic-optical system configured to irradiate a wafer with an electron beam and acquire a raw signal by detecting electrons emitted by the wafer, and an image processing device configured to convert the raw signal acquired by the electronic-optical system into image data. The electronic-optical system includes a detector configured to acquire the raw signal. The detector calibrates a gain offset using a difference in electron emission yields of different materials.

公开(公告)号：US20230140892A1

公开(公告)日：2023-05-11

申请号：US17879515

申请日：2022-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung AHN ,  Kwangeun KIM ,  Souk KIM ,  Younghoon SOHN

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/226 ,  H01J37/244

Abstract: A scanning electron microscope (SEM) includes an electron gun, a deflector, an objective lens, first and second detectors each configured to detect emission electrons emitted from the wafer based on the input electron beam being irradiated on the wafer, a first energy filter configured to block electrons having energy less than a first energy among emission electrons emitted from a wafer based on an input electron beam from being detected by the first detector, and a second energy filter configured to block electrons having energy less than second energy among the emission electrons from being detected by the second detector.

公开(公告)号：US20200184618A1

公开(公告)日：2020-06-11

申请号：US16541380

申请日：2019-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hyung AHN ,  Souk KIM ,  Joon Seo SONG ,  Young Hoon SOHN ,  Yu Sin YANG

IPC: G06T7/00 ,  G06K9/62 ,  G06K9/20

Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.

公开(公告)号：US20200182783A1

公开(公告)日：2020-06-11

申请号：US16566100

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhong JUN ,  Sung Yoon RYU ,  Souk KIM ,  Younghoon SOHN ,  Yusin YANG

IPC: G01N21/3581 ,  G01N21/39 ,  G02F1/13363

Abstract: Disclosed are a measuring apparatus and a substrate analysis method using the same. The measuring apparatus includes a light source that generates a laser beam, a beam splitter that splits the laser beam into a probe laser beam and a reference laser beam, an antenna that receives the probe laser beam to produce a terahertz beam, an electro-optical device that receives the reference laser beam and the terahertz beam to change a vertical polarization component and a horizontal polarization component of the reference laser beam, based on intensity of the terahertz beam, and a streak camera that obtains a time-domain signal corresponding to a ratio between the vertical polarization component and the horizontal polarization component.

公开(公告)号：US20220404395A1

公开(公告)日：2022-12-22

申请号：US17721522

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyoon RYU ,  Seungbum HONG ,  Kwangeun KIM ,  Hoon KIM ,  Jiwon YEOM ,  Seokjung YUN ,  Souk KIM ,  Younghoon SOHN ,  Yusin YANG

IPC: G01R1/067 ,  G01R1/04

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

公开(公告)号：US20190181062A1

公开(公告)日：2019-06-13

申请号：US16035991

申请日：2018-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Ik PARK ,  Bong Seok KIM ,  Souk KIM ,  Yu Sin YANG ,  Soo Seok LEE

IPC: H01L21/66 ,  H01L21/78 ,  H01L21/762

CPC classification number: H01L22/26 ,  H01L21/76224 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.