公开(公告)号：US20190181062A1

公开(公告)日：2019-06-13

申请号：US16035991

申请日：2018-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Ik PARK ,  Bong Seok KIM ,  Souk KIM ,  Yu Sin YANG ,  Soo Seok LEE

IPC: H01L21/66 ,  H01L21/78 ,  H01L21/762

CPC classification number: H01L22/26 ,  H01L21/76224 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.

公开(公告)号：US20150355108A1

公开(公告)日：2015-12-10

申请号：US14686913

申请日：2015-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jang Ik PARK ,  Bong Seok KIM ,  Jung Hoon BYUN ,  Kyung Hoon LEE ,  Woo-Young CHOI

IPC: G01N21/956 ,  G01N21/21 ,  G01N21/88

CPC classification number: G01N21/95607 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/12

Abstract: A method of inspecting a semiconductor device includes measuring an inspection pattern formed on a semiconductor substrate using a measurer configured to measure optical signals reflected from the inspection pattern to obtain a signal expressed by a matrix including spectrum data associated with the inspection pattern, obtaining a first element including a first spectrum from the signal and obtaining a second element including a second spectrum from the signal, obtaining a skew spectrum using a difference between the first and second spectrums, and obtaining an asymmetric signal associated with the inspection pattern using the skew spectrum, the obtaining of the asymmetric signal including obtaining a polarity of the skew spectrum in a wavelength range, and obtaining a numerical value associated with an area of the skew spectrum.

Abstract translation: 检查半导体器件的方法包括使用测量器测量在半导体衬底上形成的检查图案，所述测量器被配置为测量从检查图案反射的光信号，以获得由包括与检查图案相关联的光谱数据的矩阵表示的信号，获得第一 元件，其包括来自信号的第一频谱，并从信号中获得包括第二频谱的第二元素，使用第一和第二频谱之间的差获得偏斜谱，并使用偏斜谱获得与检查图谱相关联的非对称信号， 获得非对称信号，包括获得在波长范围内的偏斜谱的极性，以及获得与偏斜谱的区域相关联的数值。