公开(公告)号：US09892918B2

公开(公告)日：2018-02-13

申请号：US15240048

申请日：2016-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Sung Kim ,  Kyeong-Mi Lee ,  Seung-Chul Kwon ,  Jeong-Ju Park ,  Shi-Yong Yi

IPC: G03F7/004 ,  H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00 ,  G03F7/40 ,  G03F7/38 ,  G03F7/16 ,  B81C1/00

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  H01L28/00

Abstract: A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different levels, forming an upper film of hydrophobic material on the lower film, forming a block copolymer film on the upper film, phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern spanning the first patterns and interposed between a bottom surface of each of the first patterns and the upper film, removing the first patterns, and performing an etch process using the second pattern or a residual part of the second pattern as an etch mask.

公开(公告)号：US08946089B2

公开(公告)日：2015-02-03

申请号：US14108869

申请日：2013-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Sung Kim ,  Jae-Woo Nam ,  Chul-Ho Shin ,  Shi-Yong Yi

IPC: H01L21/311 ,  H01L21/768

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76877 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1683 ,  Y10S438/942

Abstract: Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction at a first pitch in each of the first openings, and second material layers filling a remaining portion of each first opening. First holes are formed by removing the first material layers. A second guide pattern is formed over the first guide pattern and the second material layers, and the above processes are performed on the second guide pattern to form second holes. Portions of the etching target layer overlapped by the first holes or the second holes are removed to form a desired pattern.

Abstract translation: 形成接触孔的方法包括在蚀刻目标层上形成第一引导图案。 第一引导图案具有各自沿第一方向延伸的第一开口，并且每个第一开口沿垂直于第一方向的方向排列。 在每个第一开口中形成第一BCP结构。 第一BCP结构包括在每个第一开口中以第一间距处于第一方向的第一材料层和填充每个第一开口的剩余部分的第二材料层。 通过去除第一材料层形成第一孔。 在第一引导图案和第二材料层上形成第二引导图案，并且在第二引导图案上执行上述处理以形成第二孔。 由第一孔或第二孔重叠的蚀刻目标层的一部分被去除以形成所需的图案。

公开(公告)号：US08900468B2

公开(公告)日：2014-12-02

申请号：US13905662

申请日：2013-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Sung Kim ,  Jae-Woo Nam ,  Chul-Ho Shin ,  Shi-Yong Yi

IPC: C03C25/68 ,  G03F7/00

CPC classification number: G03F7/0035 ,  G03F7/40

Abstract: A method includes forming a hydrophilic guide layer, a DBARC layer and a photoresist film. A portion of the photoresist film and DBARC layer is exposed to form exposed and unexposed portions. The unexposed photoresist film is removed to form a photoresist pattern including the exposed photoresist film portion. A neutral layer is formed on the photoresist pattern. The photoresist pattern and the DBARC layer of the exposed portion are removed to form first opening portions exposing the guide layer. A block copolymer layer includes a block copolymer having first and second polymer blocks coated on the neutral layer while filling the first opening portions. The block copolymer layer is microphase separated to form a pattern layer including first and second patterns. A pattern including one polymer block is removed to form a pattern mask. The object layer is etched to form a pattern including second opening portions.

Abstract translation: 一种方法包括形成亲水引导层，DBARC层和光刻胶膜。 光刻胶膜和DBARC层的一部分被曝光以形成曝光和未曝光的部分。 去除未曝光的光致抗蚀剂膜以形成包括曝光的光致抗蚀剂膜部分的光致抗蚀剂图案。 在光致抗蚀剂图案上形成中性层。 去除曝光部分的光致抗蚀剂图案和DBARC层以形成露出引导层的第一开口部分。 嵌段共聚物层包括在填充第一开口部分时具有涂覆在中性层上的第一和第二聚合物嵌段的嵌段共聚物。 嵌段共聚物层被微相分离以形成包括第一和第二图案的图案层。 除去包括一个聚合物嵌段的图案以形成图案掩模。 对象层被蚀刻以形成包括第二开口部分的图案。

公开(公告)号：US20130288482A1

公开(公告)日：2013-10-31

申请号：US13630270

申请日：2012-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Woo Nam ,  Kyoung-Seon Kim ,  Eun-Sung Kim ,  Chul-Ho Shin ,  Shi-Yong Yi

IPC: H01L21/31

CPC classification number: H01L21/0273 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: In a method of forming a pattern, a photoresist pattern is formed on a substrate including an etching target layer. A surface treatment is performed on the photoresist pattern to form a guide pattern having a higher heat-resistance than the photoresist pattern. A material layer including a block copolymer including at least two polymer blocks is coated on a portion of the substrate exposed by the guide pattern. A micro-phase separation is performed on the material layer to form a minute pattern layer including different polymer blocks arranged alternately. At least one polymer block is removed from the minute pattern layer to form a minute pattern mask. The etching target layer is etched by using the minute pattern mask to form a pattern. Minute patterns may be formed utilizing a less complex process that those employed during conventional processes of forming a minute pattern.

Abstract translation: 在形成图案的方法中，在包括蚀刻目标层的基板上形成光致抗蚀剂图案。 在光致抗蚀剂图案上进行表面处理以形成具有比光致抗蚀剂图案更高的耐热性的引导图案。 包含至少两个聚合物嵌段的嵌段共聚物的材料层被涂覆在由引导图案暴露的基板的一部分上。 在材料层上进行微相分离以形成包括交替布置的不同聚合物嵌段的微小图案层。 从微图案层去除至少一个聚合物嵌段以形成微小图案掩模。 通过使用微图案掩模蚀刻蚀刻目标层以形成图案。 可以使用在形成微小图案的常规工艺中使用的较不复杂的工艺来形成分数图案。