公开(公告)号：US09892918B2

公开(公告)日：2018-02-13

申请号：US15240048

申请日：2016-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Sung Kim ,  Kyeong-Mi Lee ,  Seung-Chul Kwon ,  Jeong-Ju Park ,  Shi-Yong Yi

IPC: G03F7/004 ,  H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00 ,  G03F7/40 ,  G03F7/38 ,  G03F7/16 ,  B81C1/00

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  H01L28/00

Abstract: A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different levels, forming an upper film of hydrophobic material on the lower film, forming a block copolymer film on the upper film, phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern spanning the first patterns and interposed between a bottom surface of each of the first patterns and the upper film, removing the first patterns, and performing an etch process using the second pattern or a residual part of the second pattern as an etch mask.