公开(公告)号：US20230411393A1

公开(公告)日：2023-12-21

申请号：US18140789

申请日：2023-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moosong LEE ,  Jinsun KIM ,  Inho KWAK ,  Dohyeon PARK ,  Yeeun HAN ,  Sang-Ho YUN ,  Seungyoon LEE ,  Nanhyung KIM

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L29/66545 ,  H01L27/0207 ,  H01L21/823437 ,  H01L21/823475 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate having a key region, a dummy active pattern on the key region, the dummy active pattern including a first impurity region and a second impurity region, a line structure provided on the first impurity region and extended in a first direction, a dummy gate electrode provided between the first and second impurity regions and extended in a second direction crossing the first direction, and a dummy contact disposed adjacent to a side of the line structure and connected to the second impurity region. The dummy contact includes a plurality of long contacts arranged in the second direction.

公开(公告)号：US20220091497A1

公开(公告)日：2022-03-24

申请号：US17407425

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Ho YUN ,  Soo Kyung KIM ,  Jaikyun PARK ,  Donghoon LEE ,  Rankyung JUNG ,  Soonmok HA

IPC: G03F1/24 ,  H01L21/027

Abstract: A reflective mask includes a central region and first and second peripheral regions at opposite sides of the central region, respectively, the first peripheral region including a first out-of-band region having a first edge region extending in a first direction, and a first expansion region between the first edge region and the central region, and a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.

公开(公告)号：US20240045342A1

公开(公告)日：2024-02-08

申请号：US18302375

申请日：2023-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su Bin KONG ,  Sang-Ho YUN ,  Woo Jin JUNG

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/0392 ,  G03F7/0025 ,  G03F7/2002 ,  G03F7/70466

Abstract: A method for inspecting a critical dimension may include providing a substrate, applying a photoresist on the substrate, variably irradiating a dose of light onto the photoresist, performing a photo process to develop the photoresist to form a photoresist pattern, performing an etching process using the photoresist pattern as an etching mask to form a plurality of patterns, measuring a width of each of the plurality of patterns and a spacing between adjacent ones of the plurality of patterns, and identifying a cause of a defect in the photo process based on the measured width and the measured spacing.