公开(公告)号：US20230207627A1

公开(公告)日：2023-06-29

申请号：US17938642

申请日：2022-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sug Hyun Sung ,  Jung Gun You ,  Mi Ri Joung

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L29/0847 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/42368 ,  H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823864

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device comprising an active pattern including, a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction, wherein the lower pattern includes a semiconductor material, a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, a source/drain recess between adjacent ones of the gate structures, wherein a bottom of the source/drain recess is in the lower pattern, a bottom insulating liner in the bottom of the source/drain recess, and a source/drain pattern in the source/drain recess and on top of the bottom insulating liner.