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公开(公告)号:US08854916B2
公开(公告)日:2014-10-07
申请号:US13862957
申请日:2013-04-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dae-Hyun Kim , Kwang-il Park , Kyoung-Ho Kim , Hyun-Jin Kim , Hye-Ran Kim
IPC: G11C8/00 , G11C8/18 , G11C11/4076 , G11C8/12 , G11C7/08 , G11C11/4091
CPC classification number: G11C8/18 , G11C7/08 , G11C8/12 , G11C11/4076 , G11C11/4091
Abstract: Example embodiments provide a semiconductor memory device that may include: a cell array arranged in pluralities of rows and columns; and a sense amplifier conducting writing and reading operations to the cell array in response to writing and reading commands in correspondence with an access time, which may be variable in period. The sense amplifier adjusts pulse widths of write-in and read-out data in accordance with a period of the access time.
Abstract translation: 示例性实施例提供半导体存储器件,其可以包括:布置成多行和列的单元阵列; 以及响应于写入和读取对应于在周期可变的访问时间的访问时间,对单元阵列执行写入和读取操作的读出放大器。 读出放大器根据访问时间的周期来调整写入和读出数据的脉冲宽度。
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公开(公告)号:US11071067B2
公开(公告)日:2021-07-20
申请号:US16871286
申请日:2020-05-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong-Jun Park , Joo-Han Kim , Kyoung-Ho Kim , Joohyun Do , Mingoo Kim , Taelee Lee , Dong-Il Son
Abstract: An electronic device includes: an antenna; a communication circuit connected with the antenna; and one or more processors, wherein the one or more processors are configured to: identify a second amount of power corresponding to a second output signal outputted through the antenna for a second time using the communication circuit, the operation of identifying the second amount of power comprising an operation of identifying a second electromagnetic wave absorption rate corresponding to the second amount of power; determine a maximum output power for a third output signal to be outputted through the antenna according to a difference between a target electromagnetic wave absorption rate and the second electromagnetic absorption rate; and output the third output signal through the antenna based at least one the maximum output power.
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公开(公告)号:US20250048627A1
公开(公告)日:2025-02-06
申请号:US18427977
申请日:2024-01-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaehyeok Heo , Kyoung-Ho Kim , Hojun Lee , Sungsu Moon , Sea Hoon Lee , Jaeduk Lee , Junhee Lim
Abstract: Disclosed are semiconductor devices and electronic systems including the same. The semiconductor device includes a substrate that has a recess region, a gate electrode on a bottom surface of the recess region, a gate dielectric layer between the gate electrode and the bottom surface of the recess region, a plurality of shield electrodes on laterally opposite sides of the gate electrode and on inner sidewalls of the recess region, a plurality of dielectric patterns between the shield electrodes and the inner sidewalls of the recess region, a plurality of impurity regions in the substrate and on opposite sides of the shield electrodes, and a channel region in the substrate and below the bottom surface of the recess region.
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公开(公告)号:US10652839B2
公开(公告)日:2020-05-12
申请号:US16164896
申请日:2018-10-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong-Jun Park , Joo-Han Kim , Kyoung-Ho Kim , Joohyun Do , Mingoo Kim , Taelee Lee , Dong-Il Son
Abstract: An electronic device includes: an antenna; a communication circuit connected with the antenna; and one or more processors, wherein the one or more processors are configured to: identify a second amount of power corresponding to a second output signal outputted through the antenna for a second time using the communication circuit, the operation of identifying the second amount of power comprising an operation of identifying a second electromagnetic wave absorption rate corresponding to the second amount of power; determine a maximum output power for a third output signal to be outputted through the antenna according to a difference between a target electromagnetic wave absorption rate and the second electromagnetic absorption rate; and output the third output signal through the antenna based at least one the maximum output power.
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