公开(公告)号：US20220262621A1

公开(公告)日：2022-08-18

申请号：US17478619

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Young Hoo KIM ,  Seung Min SHIN ,  Tae Min EARMME ,  Kun Tack LEE ,  Hun Jae JANG ,  Eun Hee JEANG

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/428 ,  B08B3/08

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

公开(公告)号：US20230154743A1

公开(公告)日：2023-05-18

申请号：US18098330

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeongKeun CHO ,  Young Hoo KIM ,  Seung Min SHIN ,  Tae Min EARMME ,  Kun Tack LEE ,  Hun Jae JANG ,  Eun Hee JEANG

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/428 ,  H01L21/687

CPC classification number: H01L21/02057 ,  B08B3/08 ,  H01L21/428 ,  H01L21/68764

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

公开(公告)号：US20250091101A1

公开(公告)日：2025-03-20

申请号：US18627651

申请日：2024-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Jine PARK ,  Ji Hwan PARK ,  Kun Tack LEE

IPC: B08B7/00 ,  H01L21/67

Abstract: A substrate processing apparatus includes a reactor having a processing space formed therein, a fluid supply unit supplying a supercritical fluid into the processing space of the reactor, and a controller controlling the reactor and the fluid supply unit. The controller controls, in response to whether a state of the supercritical fluid supplied to the reactor satisfies a set condition, the reactor and the fluid supply unit to perform one of cleaning of the processing space by using the supercritical fluid and drying of a substrate seated in the processing space by using the supercritical fluid.

公开(公告)号：US20230343613A1

公开(公告)日：2023-10-26

申请号：US18214096

申请日：2023-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Jun CHOI ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Sung Hyun PARK ,  Seung Min SHIN ,  Kun Tack LEE ,  Jinwoo LEE ,  Hun Jae JANG ,  Ji Hoon CHA

IPC: H01L21/67 ,  B08B3/08 ,  H01L21/687

CPC classification number: H01L21/67167 ,  H01L21/67063 ,  H01L21/67051 ,  B08B3/08 ,  H01L21/67034 ,  H01L21/68707

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US20210060625A1

公开(公告)日：2021-03-04

申请号：US16890490

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Min SHIN ,  Hun Jae JANG ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Tae-Hong KIM ,  Kun Tack LEE ,  Ji Hoon CHA ,  Yong Jun CHOI

IPC: B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20230197481A1

公开(公告)日：2023-06-22

申请号：US17892677

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min SHIN ,  Sang Jin PARK ,  Hae Won CHOI ,  Jang Jin LEE ,  Ji Hwan PARK ,  Kun Tack LEE ,  Koriakin ANTON ,  Joon Ho WON ,  Jin Yeong SUNG ,  Pil Kyun HEO

IPC: H01L21/67 ,  B65G47/90 ,  G03F7/16

CPC classification number: H01L21/67196 ,  H01L21/67225 ,  B65G47/90 ,  G03F7/168

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

公开(公告)号：US20220118582A1

公开(公告)日：2022-04-21

申请号：US17401105

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Ki HONG ,  Youg Hee LEE ,  Byoung Ho Kwon ,  Kun Tack LEE

IPC: B24B37/015 ,  B24B37/20 ,  B24B53/017 ,  H01L21/67 ,  H01L21/306

Abstract: A chemical mechanical polishing method is provided. A chemical mechanical polishing method comprising providing a polishing pad, supplying a first purging compound having a first temperature onto the polishing pad, supplying a first slurry having a third temperature onto the polishing pad supplied with the first purging compound, supplying a second purging compound having a second temperature lower than the first temperature onto the polishing pad, and supplying a second slurry having a fourth temperature lower than the third temperature onto the polishing pad supplied with the second purging compound.

公开(公告)号：US20200343113A1

公开(公告)日：2020-10-29

申请号：US16690498

申请日：2019-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Jun CHOI ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Sung Hyun PARK ,  Seung Min SHIN ,  Kun Tack LEE ,  Jinwoo LEE ,  Hun Jae JANG ,  Ji Hoon CHA

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/08

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US20180114706A1

公开(公告)日：2018-04-26

申请号：US15495088

申请日：2017-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ryol YANG ,  Kyo Jun JEON ,  Kun Tack LEE ,  Jong Heun LIM

IPC: H01L21/673 ,  H01L21/67 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/6732 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/4586 ,  H01L21/67017 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67309

Abstract: A wafer boat assembly including a boat, a pedestal, and a base. The boat includes a slot to hold a wafer and a rod including a gas line. The pedestal includes a first surface and a connection line coupled to the gas line. The base is on a second surface of the pedestal, rotates the pedestal, and supplies gas to the connection line. The boat is on the first surface of the pedestal. The gas flows along the gas line and is dispensed from a location where the rod contacts the wafer to levitate the wafer.