公开(公告)号：US20250093768A1

公开(公告)日：2025-03-20

申请号：US18770090

申请日：2024-07-11

Applicant: SEMES CO., LTD. ,  SAMSUNG ELECTRONICS CO. LTD.

Inventor： Jin Yeong SUNG ,  Ki Hoon CHOI ,  Seung Un OH ,  Young Ho PARK ,  Sang Hyeon RYU ,  Jang Jin LEE ,  Hyun YOON ,  Sang Gun LEE ,  Yu Jin CHO ,  Ho Jong HWANG ,  Jong Ju PARK ,  Jong Keun OH ,  Yong Woo KIM

IPC: G03F1/72 ,  G03F1/84 ,  G06T7/20 ,  G06T7/66

Abstract: A substrate processing apparatus is provided and includes: a support unit including a spin chuck and a centering jig that is on the spin chuck, the spin chuck configured to support and rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a swing arm including a correction unit that includes a sensor and an emitter, the swing arm configured to move such that the correction unit moves to a target point on the substrate, and the emitter configured to irradiate a beam towards the substrate; and a controller configured to: control the spin chuck and the swing arm; and determine whether a movement trajectory of the swing arm is aligned with a rotation center of the spin chuck based on information acquired by the sensor about the centering jig.

公开(公告)号：US20230197481A1

公开(公告)日：2023-06-22

申请号：US17892677

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min SHIN ,  Sang Jin PARK ,  Hae Won CHOI ,  Jang Jin LEE ,  Ji Hwan PARK ,  Kun Tack LEE ,  Koriakin ANTON ,  Joon Ho WON ,  Jin Yeong SUNG ,  Pil Kyun HEO

IPC: H01L21/67 ,  B65G47/90 ,  G03F7/16

CPC classification number: H01L21/67196 ,  H01L21/67225 ,  B65G47/90 ,  G03F7/168

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.