知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.026 seconds)

    SEMICONDUCTOR SWITCHING DEVICES WITH ENHANCED PERFORMANCE USING 2-DIMENSIONAL MATERIALS
    4.
    发明公开
    SEMICONDUCTOR SWITCHING DEVICES WITH ENHANCED PERFORMANCE USING 2-DIMENSIONAL MATERIALS 审中-公开

    公开(公告)号：US20230299141A1

    公开(公告)日：2023-09-21

    申请号：US18148657

    申请日：2022-12-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kijoon Kim

    IPC: H01L29/10 ,  H01L29/08 ,  H01L29/24

    CPC classification number: H01L29/1033 ,  H01L29/0847 ,  H01L29/24

    Abstract: A semiconductor device includes a semiconductor channel region on a substrate, and a contact layer that contacts a first side of the channel region. The channel region may include a transition metal dichalcogenide (TMD) monolayer as a semiconductor layer. The contact layer includes a first transition metal and a first chalcogen element bonded to the first transition metal. A gate structure is provided on the channel region, and a source/drain layer is provided that contacts the contact layer. The source/drain layer includes a metal that forms a covalent bond with the first transition metal within the contact layer.

    SEMICONDUCTOR DEVICES
    6.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20230354580A1

    公开(公告)日：2023-11-02

    申请号：US18115116

    申请日：2023-02-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minjun Lee ,  Kijoon Kim ,  Yongseok Kim

    IPC: H10B12/00

    CPC classification number: H10B12/20 ,  H10B12/01

    Abstract: A semiconductor device includes a gate electrode on a substrate, a memory body structure extending through the gate electrode, a source layer at an end portion of the memory body structure and including germanium doped with p-type impurities, and a drain layer at another end portion of the memory body structure and including a metal or a metal alloy. The memory body structure may include a body including undoped polysilicon, a charge storage pattern on a sidewall of the body, and a blocking pattern on an outer sidewall of the charge storage pattern and contacting the gate electrode.

    Module comprising antenna and RF element, and base station including same
    7.
    发明授权
    Module comprising antenna and RF element, and base station including same 有权

    公开(公告)号：US11063371B2

    公开(公告)日：2021-07-13

    申请号：US17063929

    申请日：2020-10-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghyun Baek ,  Seungtae Ko ,  Kijoon Kim ,  Juho Son ,  Sangho Lee ,  Youngju Lee ,  Jungyub Lee ,  Yonghun Cheon ,  Dohyuk Ha

    IPC: H01Q21/06 ,  H05K1/18 ,  H01Q1/42 ,  H01Q1/24 ,  H05K9/00 ,  H04B7/0413

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

    Module comprising antenna and RF element, and base station including same
    8.
    发明授权
    Module comprising antenna and RF element, and base station including same 有权

    公开(公告)号：US10797405B1

    公开(公告)日：2020-10-06

    申请号：US16906476

    申请日：2020-06-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghyun Baek ,  Seungtae Ko ,  Kijoon Kim ,  Juho Son ,  Sangho Lee ,  Youngju Lee ,  Jungyub Lee ,  Yonghun Cheon ,  Dohyuk Ha

    IPC: H01Q1/42 ,  H01Q21/06 ,  H01Q1/24 ,  H04B7/0413 ,  H05K1/18 ,  H05K9/00

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

    SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE
    9.
    发明公开
    SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE 审中-公开

    公开(公告)号：US20230301067A1

    公开(公告)日：2023-09-21

    申请号：US18118560

    申请日：2023-03-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kijoon Kim

    IPC: H10B12/00

    CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/50 ,  H10B12/05

    Abstract: A semiconductor device is provided. The semiconductor device includes: a lower structure including bit lines; an intermediate structure including vertical channel structures and gate structures; and an upper structure including a data storage structure. A first channel structure among the vertical channel structures includes a lower portion, and first and second vertical portions extending upwardly from sides of the lower portion. The gate structures include first and second gate structures on the lower portion between the first vertical portion and the second vertical portion. The first gate structure is in contact with the first vertical portion. The second gate structure is in contact with the second vertical portion. The first channel structure includes a plurality of layers. At least one of the plurality of layers is an oxide semiconductor layer or a two-dimensional (2D) material layer having an energy band gap of about 1.2 eV or greater.

    Module comprising antenna and RF element, and base station including same
    10.
    发明授权
    Module comprising antenna and RF element, and base station including same 有权

    公开(公告)号：US11063370B2

    公开(公告)日：2021-07-13

    申请号：US17063918

    申请日：2020-10-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghyun Baek ,  Seungtae Ko ,  Kijoon Kim ,  Juho Son ,  Sangho Lee ,  Youngju Lee ,  Jungyub Lee ,  Yonghun Cheon ,  Dohyuk Ha

    IPC: H01Q21/06 ,  H05K1/18 ,  H01Q1/42 ,  H01Q1/24 ,  H05K9/00 ,  H04B7/0413

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

Patent Agency Ranking