SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250167111A1

    公开(公告)日:2025-05-22

    申请号:US18674263

    申请日:2024-05-24

    Abstract: Provided is a semiconductor device including a lower structure, a dielectric layer on the lower structure, and first and second interconnection lines extending in a first direction in the dielectric layer and alternately disposed and spaced apart from each other in a second direction, perpendicular to the first direction, at least one of the first interconnection lines includes a first subpattern and a second subpattern overlapping in the first direction and spaced apart from each other, at least one of the second interconnection lines includes a third subpattern and a fourth subpattern overlapping in the first direction and spaced apart from each other, two ends of the first subpattern and the second subpattern respectively facing each other in the first direction have a convex protruding shape, and two ends of the third subpattern and the fourth subpattern respectively facing each other in the first direction have a concave protruding shape.

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