Abstract:
An MRAM device may include an insulating interlayer structure, a lower electrode contact structure and a variable resistance structure. The insulating interlayer may be formed on a substrate. The lower electrode contact structure may extend through the insulating interlayer. The lower electrode contact structure may include a first electrode having a pillar shape and a second electrode having a cylindrical shape on the first electrode. An upper surface of the second electrode may have a ring shape. A variable resistance structure may be formed on the second electrode. The variable resistance structure may include a lower electrode, a magnetic tunnel junction (MTJ) structure and an upper electrode sequentially stacked.
Abstract:
A resistive memory device includes a cell block having a plurality of unit memory cells in which a resistive element and a cell select element are connected to each other in series, the cell block operating in response to a word line, a bit line, and a source line, and a dummy line, when different interconnection layers form the source line and the bit line, respectively, connected to one of the interconnection layers which is formed at a lower side the remaining interconnection layer between the interconnection layers for the source line and the bit line, wherein the dummy line has a resistance lower than a resistance of the lower interconnection layer.
Abstract:
The magnetic memory device includes a plurality of source lines arranged in parallel in a second direction orthogonal to a first direction while extending in the first direction on a substrate, a plurality of word lines arranged in parallel in the first direction while extending in the second direction on the substrate, a plurality of bit lines arranged in parallel in the second direction while extending in the first direction on the substrate to alternate with the plurality of source lines, and a plurality of active regions arranged to extend at an oblique angle with respect to the first direction and arranged so that one memory cell is selected when one of the plurality of word lines and one of the plurality of source lines or the plurality of bit lines are selected.
Abstract:
A magnetoresistive random access memory (MRAM) device including a substrate including a plurality of active patterns arranged along a first direction, each of the active patterns extending in a diagonal direction with respect to the first direction; a plurality of gate structures on the substrate, the gate structures extending in a second direction substantially perpendicular to the first direction; a source line structure electrically connected to source regions of the respective active patterns, the source line structure extending in the first direction; a plurality of magnetic tunnel junction (MTJ) structures electrically connected to drain regions of the respective active patterns, the MTJ structures being spaced apart from each other; and a bit line structure electrically connected to the MTJ structures in respective memory cells, the memory cells sharing with the source line structure.