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    CAPACITOR STRUCTURES AND METHODS OF FORMING THE SAME, AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
    4.
    发明申请
    CAPACITOR STRUCTURES AND METHODS OF FORMING THE SAME, AND SEMICONDUCTOR DEVICES INCLUDING THE SAME 审中-公开
    电容器结构及其形成方法以及包括其的半导体器件

    公开(公告)号：US20170025416A1

    公开(公告)日：2017-01-26

    申请号：US15067705

    申请日：2016-03-11

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jung-Hoon Han ,  Jong-Min Lee ,  Dong-Wan Kim ,  Ju-Ik Lee

    IPC分类号： H01L27/108 ,  H01L29/423 ,  H01L49/02

    CPC分类号： H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L28/60 ,  H01L28/86 ,  H01L29/4236

    摘要： A capacitor structure includes a plurality of lower electrodes, a support pattern structure, a dielectric layer, and an upper electrode. The lower electrodes are formed on a substrate. The support pattern structure is formed between the lower electrodes, and includes a lower support pattern and an upper support pattern structure over the lower support pattern. The upper support pattern structure includes a plurality of upper support patterns spaced apart from each other in a direction substantially perpendicular to a top surface of the substrate. The dielectric layer is formed on the lower electrodes and the support pattern structure. The upper electrode is formed on the dielectric layer. A sum of thicknesses of the plurality of upper support patterns in the direction substantially perpendicular to the top surface of the substrate is about 35% to about 85% of a total thickness of the upper support pattern structure.

    摘要翻译： 电容器结构包括多个下电极，支撑图案结构，电介质层和上电极。 下电极形成在基板上。 支撑图案结构形成在下电极之间，并且在下支撑图案上方包括下支撑图案和上支撑图案结构。 上支撑图案结构包括在基本上垂直于基板的顶表面的方向上彼此间隔开的多个上支撑图案。 电介质层形成在下电极和支撑图案结构上。 上电极形成在电介质层上。 多个上支撑图案在基本上垂直于基板顶表面的方向上的厚度之和为上支撑图案结构的总厚度的约35％至约85％。

    Semiconductor device having air-gap
    5.
    发明授权
    Semiconductor device having air-gap 有权
    具有气隙的半导体装置

    公开(公告)号：US09379002B2

    公开(公告)日：2016-06-28

    申请号：US14554113

    申请日：2014-11-26

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jung-Hoon Han ,  Dong-Wan Kim ,  Ju-Ik Lee

    IPC分类号： H01L21/00 ,  H01L21/764 ,  H01L27/108 ,  H01L23/532 ,  G11C7/18

    CPC分类号： G11C5/063 ,  G11C7/18 ,  H01L21/764 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/535 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a bit line structure located on a semiconductor substrate, an outer bit line spacer located on a first side surface of the bit line structure, an inner bit line spacer including a first part located between the bit line structure and the outer bit line spacer and a second part located between the semiconductor substrate and the outer bit line spacer, and a block bit line spacer located between the outer bit line spacer and the second part of the inner bit line spacer. A first air-gap is defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer.

    摘要翻译： 半导体器件包括位于半导体衬底上的位线结构，位线在位线结构的第一侧表面上的外部位线间隔件，内部位线间隔件包括位于位线结构和外部位之间的第一部分 并且位于半导体衬底和外部位线间隔物之间​​的第二部分和位于外部位线间隔物和内部位线间隔物的第二部分之间的块位线间隔件。 第一气隙由外部位线间隔件，内部位线间隔件和块位线间隔件限定。