公开(公告)号：US11764180B2

公开(公告)日：2023-09-19

申请号：US17371405

申请日：2021-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Ik Lee ,  Dong-Wan Kim ,  Seokho Shin ,  Jung-Hoon Han ,  Sang-Oh Park

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/18 ,  H01L23/528 ,  H01L23/31 ,  H01L23/522

CPC classification number: H01L24/17 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/09 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2924/1436

Abstract: A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

公开(公告)号：US11075183B2

公开(公告)日：2021-07-27

申请号：US16455788

申请日：2019-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Ik Lee ,  Dong-Wan Kim ,  Seokho Shin ,  Jung-Hoon Han ,  Sang-Oh Park

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/18 ,  H01L23/528 ,  H01L23/31 ,  H01L23/522

Abstract: A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

公开(公告)号：US09087729B2

公开(公告)日：2015-07-21

申请号：US14336334

申请日：2014-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Oh Park ,  Chang-Hwan Kim ,  Whan Namkoong ,  Jun-Young Jang

IPC: H01L27/108 ,  H01L23/00 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L24/14 ,  H01L27/10808 ,  H01L27/10855 ,  H01L28/90 ,  H01L2224/1401 ,  H01L2224/1405 ,  H01L2224/14131 ,  H01L2224/14151 ,  H01L2224/1451 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of cylindrical structures located at vertices and central points of a plurality of hexagons in a honeycomb pattern, and a unitary support having a plurality of openings. Each of the openings exposes a part each of four of the cylindrical structures. Each of the openings has the shape of a parallelogram or an oval substantially. A first distance between opposite cylindrical structures of a first pair of the four cylindrical structures exposed by each opening is shorter than a second distance between opposite cylindrical structures of a second pair of the four cylindrical structures exposed by the opening. The first distance is equal to a distance between the central point and each of the vertices of the hexagon.

Abstract translation: 半导体器件包括位于蜂窝状图案的多个六边形的顶点和中心点处的多个圆柱形结构，以及具有多个开口的单一支撑件。 每个开口暴露四个圆柱形结构中的每一个的一部分。 每个开口都具有平行四边形或椭圆形的形状。 由每个开口暴露的第一对四个圆柱形结构的相对的圆柱形结构之间的第一距离比通过开口暴露的第四对圆柱形结构的第二对的圆柱形结构之间的第二距离短。 第一个距离等于六边形的中心点和每个顶点之间的距离。