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    VERTICAL TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    VERTICAL TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220199642A1

    公开(公告)日：2022-06-23

    申请号：US17654779

    申请日：2022-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun-Taek Jung ,  Joong-Shik Shin ,  Byung-Kwan You

    IPC: H01L27/11582 ,  H01L21/311 ,  H01L27/1157 ,  H01L29/792 ,  H01L29/66 ,  H01L29/788 ,  H01L27/11556

    Abstract: A vertical type semiconductor device includes a substrate that has a plurality of trenches, a support pattern that fills the plurality of trenches and protrudes from a top surface of the substrate, a semiconductor layer disposed on the substrate that fills a space between the support patterns, a stacked structure disposed on the support pattern and the semiconductor layer that includes a plurality of insulation layers and a plurality of first conducive patterns that are alternately and repeatedly stacked, and a plurality of channel structures that penetrate through the structure and the semiconductor layer and that extend into the support pattern. Each channel structure includes a channel layer. At least a portion of the channel layer makes contact with the semiconductor layer.

    Vertical type semiconductor devices and methods of manufacturing the same
    2.
    发明授权
    Vertical type semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US11276709B2

    公开(公告)日：2022-03-15

    申请号：US16933328

    申请日：2020-07-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun-Taek Jung ,  Joong-Shik Shin ,  Byung-Kwan You

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/311 ,  H01L29/788 ,  H01L29/792 ,  H01L27/1157

    Abstract: A vertical type semiconductor device includes a substrate that has a plurality of trenches, a support pattern that fills the plurality of trenches and protrudes from a top surface of the substrate, a semiconductor layer disposed on the substrate that fills a space between the support patterns, a stacked structure disposed on the support pattern and the semiconductor layer that includes a plurality of insulation layers and a plurality of first conducive patterns that are alternately and repeatedly stacked, and a plurality of channel structures that penetrate through the structure and the semiconductor layer and that extend into the support pattern. Each channel structure includes a channel layer. At least a portion of the channel layer makes contact with the semiconductor layer.

    Vertical type semiconductor devices and methods of manufacturing the same
    3.
    发明授权
    Vertical type semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US12262537B2

    公开(公告)日：2025-03-25

    申请号：US18419818

    申请日：2024-01-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun-Taek Jung ,  Joong-Shik Shin ,  Byung-Kwan You

    IPC: H10B43/27 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H10B41/27 ,  H10B43/35

    Abstract: A vertical type semiconductor device includes a substrate that has a plurality of trenches, a support pattern that fills the plurality of trenches and protrudes from a top surface of the substrate, a semiconductor layer disposed on the substrate that fills a space between the support patterns, a stacked structure disposed on the support pattern and the semiconductor layer that includes a plurality of insulation layers and a plurality of first conducive patterns that are alternately and repeatedly stacked, and a plurality of channel structures that penetrate through the structure and the semiconductor layer and that extend into the support pattern. Each channel structure includes a channel layer. At least a portion of the channel layer makes contact with the semiconductor layer.

    Vertical type semiconductor devices and methods of manufacturing the same
    6.
    发明授权
    Vertical type semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US10741575B2

    公开(公告)日：2020-08-11

    申请号：US16115246

    申请日：2018-08-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun-Taek Jung ,  Joong-Shik Shin ,  Byung-Kwan You

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/311 ,  H01L29/788 ,  H01L29/792 ,  H01L27/1157

    Abstract: A vertical type semiconductor device includes a substrate that has a plurality of trenches, a support pattern that fills the plurality of trenches and protrudes from a top surface of the substrate, a semiconductor layer disposed on the substrate that fills a space between the support patterns, a stacked structure disposed on the support pattern and the semiconductor layer that includes a plurality of insulation layers and a plurality of first conducive patterns that are alternately and repeatedly stacked, and a plurality of channel structures that penetrate through the structure and the semiconductor layer and that extend into the support pattern. Each channel structure includes a channel layer. At least a portion of the channel layer makes contact with the semiconductor layer.

    VERTICAL TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    7.
    发明申请
    VERTICAL TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190148399A1

    公开(公告)日：2019-05-16

    申请号：US16115246

    申请日：2018-08-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun-Taek Jung ,  Joong-Shik Shin ,  Byung-Kwan You

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H01L21/311

    Abstract: A vertical type semiconductor device includes a substrate that has a plurality of trenches, a support pattern that fills the plurality of trenches and protrudes from a top surface of the substrate, a semiconductor layer disposed on the substrate that fills a space between the support patterns, a stacked structure disposed on the support pattern and the semiconductor layer that includes a plurality of insulation layers and a plurality of first conducive patterns that are alternately and repeatedly stacked, and a plurality of channel structures that penetrate through the structure and the semiconductor layer and that extend into the support pattern. Each channel structure includes a channel layer. At least a portion of the channel layer makes contact with the semiconductor layer.

    Methods of Fabricating Nonvolatile Memory Devices and Related Devices
    9.
    发明申请
    Methods of Fabricating Nonvolatile Memory Devices and Related Devices 有权
    制造非易失性存储器件和相关器件的方法

    公开(公告)号：US20130183818A1

    公开(公告)日：2013-07-18

    申请号：US13742554

    申请日：2013-01-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Seok Na ,  Ji-Hwon Lee ,  Joong-Shik Shin ,  Chang-Sun Lee

    IPC: H01L29/66

    CPC classification number: H01L29/66477 ,  H01L21/28273 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/764 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

    Abstract: Provided is a fabricating method of a nonvolatile memory. The fabricating method includes forming a plurality of gates extending in a first direction on a substrate to be adjacent to each other, forming a gap-fill layer filling at least a portion of a space between the plurality of gates, forming a supporter pattern supporting the plurality of gates on the plurality of gates and the gap-fill layer, and forming an air gap in the space between the plurality of gates by removing the gap-fill layer.

    Abstract translation: 提供了一种非易失性存储器的制造方法。 该制造方法包括：形成在基板上沿第一方向延伸的多个栅极彼此相邻，形成填充多个栅极之间的空间的至少一部分的间隙填充层，形成支撑图案的支撑图案 多个栅极上的多个栅极和间隙填充层，并且通过去除间隙填充层在多个栅极之间的空间中形成气隙。

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