公开(公告)号：US09240458B2

公开(公告)日：2016-01-19

申请号：US13742554

申请日：2013-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Seok Na ,  Ji-Hwon Lee ,  Joong-Shik Shin ,  Chang-Sun Lee

IPC: H01L21/764 ,  H01L29/66 ,  H01L21/28 ,  H01L21/762 ,  H01L27/115

CPC classification number: H01L29/66477 ,  H01L21/28273 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/764 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

Abstract: Provided is a fabricating method of a nonvolatile memory. The fabricating method includes forming a plurality of gates extending in a first direction on a substrate to be adjacent to each other, forming a gap-fill layer filling at least a portion of a space between the plurality of gates, forming a supporter pattern supporting the plurality of gates on the plurality of gates and the gap-fill layer, and forming an air gap in the space between the plurality of gates by removing the gap-fill layer.

Abstract translation: 提供了一种非易失性存储器的制造方法。 该制造方法包括：形成在基板上沿第一方向延伸的多个栅极彼此相邻，形成填充多个栅极之间的空间的至少一部分的间隙填充层，形成支撑图案的支撑图案 多个栅极上的多个栅极和间隙填充层，并且通过去除间隙填充层在多个栅极之间的空间中形成气隙。

公开(公告)号：US20130183818A1

公开(公告)日：2013-07-18

申请号：US13742554

申请日：2013-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Seok Na ,  Ji-Hwon Lee ,  Joong-Shik Shin ,  Chang-Sun Lee

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L21/28273 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/764 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

Abstract: Provided is a fabricating method of a nonvolatile memory. The fabricating method includes forming a plurality of gates extending in a first direction on a substrate to be adjacent to each other, forming a gap-fill layer filling at least a portion of a space between the plurality of gates, forming a supporter pattern supporting the plurality of gates on the plurality of gates and the gap-fill layer, and forming an air gap in the space between the plurality of gates by removing the gap-fill layer.

Abstract translation: 提供了一种非易失性存储器的制造方法。 该制造方法包括：形成在基板上沿第一方向延伸的多个栅极彼此相邻，形成填充多个栅极之间的空间的至少一部分的间隙填充层，形成支撑图案的支撑图案 多个栅极上的多个栅极和间隙填充层，并且通过去除间隙填充层在多个栅极之间的空间中形成气隙。