公开(公告)号：US11475956B2

公开(公告)日：2022-10-18

申请号：US17234175

申请日：2021-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaehoon Kim ,  Junyoung Ko ,  Sangwan Nam ,  Minjae Seo ,  Jiwon Seo ,  Hojun Lee

IPC: G11C16/08 ,  G11C16/20 ,  G11C16/16 ,  G11C16/04 ,  G11C16/30 ,  G11C16/34 ,  G11C16/26

Abstract: A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.

公开(公告)号：US20240402941A1

公开(公告)日：2024-12-05

申请号：US18644558

申请日：2024-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehun Jang ,  Sumin Kim ,  Jiwon Seo ,  Mankeun Seo ,  Hongrak Son ,  Dongmin Shin

IPC: G06F3/06

Abstract: A memory device includes first and second memory cell arrays each including a plurality of memory cells, a page buffer circuit configured to read first soft decision data including a plurality of sub-segments from the first memory cell array, and a compression circuit configured to perform a first compression operation of generating a first compression segment including a number of position values less than or equal to a first reference number, on each of a plurality of partial segments included in one of the plurality of sub-segments and sequentially perform a plurality of compression operations, which is subsequent to the first compression operation, of generating a next compression segment including a number of position values, which are less than or equal to a reference number corresponding to each compression operation, of position values included in two or more previous compression segments in each compression operation.

公开(公告)号：US11798626B2

公开(公告)日：2023-10-24

申请号：US17947320

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaehoon Kim ,  Junyoung Ko ,  Sangwan Nam ,  Minjae Seo ,  Jiwon Seo ,  Hojun Lee

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/20 ,  G11C16/16 ,  G11C16/04 ,  G11C16/30 ,  G11C16/26

CPC classification number: G11C16/08 ,  G11C16/0425 ,  G11C16/16 ,  G11C16/20 ,  G11C16/26 ,  G11C16/30 ,  G11C16/3404

Abstract: A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.

公开(公告)号：US20230148408A1

公开(公告)日：2023-05-11

申请号：US17982550

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooyong Park ,  Wontaeck Jung ,  Nayeon Kim ,  Jiwon Seo ,  Seungyong Hyun

IPC: G11C16/34 ,  G11C16/08

CPC classification number: G11C16/3459 ,  G11C16/3468 ,  G11C16/08

Abstract: An operation method of a memory device for programming memory cells to a plurality of program states includes providing a series of program pulses to selected memory cells, performing a first verification operation of verifying a target program state among the plurality of program states, performing, when the first verification operation is passed, a second verification operation of detecting fail cells among the selected memory cells to determine if these memory cells have been overprogrammed. When the number of detected fail cells is greater than or equal to a reference value, the program operation may be terminated for that location and the data may be written to another location.