公开(公告)号：US10446557B2

公开(公告)日：2019-10-15

申请号：US15204805

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin Lee ,  Ji-Eun Lee ,  Kyoung-Ho Jung ,  Satoru Yamada ,  Moonyoung Jeong

IPC: H01L21/28 ,  H01L27/108 ,  H01L29/49 ,  H01L21/3215 ,  H01L29/51

Abstract: Provided are a semiconductor device having a gate and a method of forming the same. The method includes forming a gate dielectric, forming a first conductive material layer on the gate dielectric, forming a source material layer on the first conductive material layer, and diffusing a first element included in the source material layer into the first conductive material layer by performing a thermal treatment process to form a doped material layer.

公开(公告)号：USD794013S1

公开(公告)日：2017-08-08

申请号：US29521076

申请日：2015-03-19

Applicant: Samsung Electronics Co., Ltd.

Designer： Felix Heck ,  Ju-Suek Lee ,  Yu-Na Oh ,  Hyun-Taik Lim ,  Aleix Ingles ,  Craig Morrison ,  Maxence Couthier ,  Ji-Eun Lee

公开(公告)号：US12225338B2

公开(公告)日：2025-02-11

申请号：US18103171

申请日：2023-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwa-Sung Kim ,  Dong Hyun Sohn ,  Ji-Eun Lee

IPC: H04R1/00 ,  G10L15/26 ,  G10L15/28 ,  H01L25/075 ,  H01L33/60 ,  H01L33/62 ,  H04R1/02 ,  H04R1/04

Abstract: A home appliance includes an electrical equipment compartment disposed in an upper portion of the home appliance, and including an upper side that is open, an electrical equipment compartment cover to cover the open upper side of the electrical equipment compartment, and including a speaker hole, a microphone accommodating portion which protrudes upward from an upper side of the electrical equipment compartment cover and including an accommodating space and a front portion that includes microphone holes laterally spaced apart from each other and which face toward a front of the home appliance, a microphone unit including a printed circuit board (PCB) disposed in the accommodation space behind the microphone holes and including microphone chips mounted on the PCB, and a speaker unit disposed in the electrical equipment compartment to correspond to the speaker hole.

公开(公告)号：US20200027885A1

公开(公告)日：2020-01-23

申请号：US16588360

申请日：2019-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin Lee ,  Ji-Eun Lee ,  Kyoung-Ho Jung ,  Satoru Yamada ,  Moonyoung Jeong

IPC: H01L27/108 ,  H01L21/28 ,  H01L29/49

Abstract: Provided are a semiconductor device having a gate and a method of forming the same. The method includes forming a gate dielectric, forming a first conductive material layer on the gate dielectric, forming a source material layer on the first conductive material layer, and diffusing a first element included in the source material layer into the first conductive material layer by performing a thermal treatment process to form a doped material layer.

公开(公告)号：USD780177S1

公开(公告)日：2017-02-28

申请号：US29520911

申请日：2015-03-18

Applicant: Samsung Electronics Co., Ltd.

Designer： Felix Heck ,  Ju-Suek Lee ,  Yu-Na Oh ,  Hyun-Taik Lim ,  Aleix Ingles ,  Craig Morrison ,  Maxence Couthier ,  Ji-Eun Lee ,  Jin-Soo Kim

公开(公告)号：USD788105S1

公开(公告)日：2017-05-30

申请号：US29521057

申请日：2015-03-19

Applicant: Samsung Electronics Co., Ltd.

Designer： Felix Heck ,  Ju-Suek Lee ,  Yu-Na Oh ,  Hyun-Taik Lim ,  Aleix Ingles ,  Craig Morrison ,  Maxence Couthier ,  Ji-Eun Lee

公开(公告)号：US20230209814A1

公开(公告)日：2023-06-29

申请号：US17819295

申请日：2022-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonok Jung ,  Hyojin Park ,  Hojin Sung ,  Ji-Eun Lee ,  Young-Seung Cho

IPC: H01L27/108 ,  H01L21/762

CPC classification number: H01L27/10897 ,  H01L27/10844 ,  H01L21/76232 ,  H01L27/10814

Abstract: A semiconductor device includes a substrate having a peripheral region and a cell region therein. A first semiconductor active pattern is provided, which protrudes from the substrate in the peripheral region. A second semiconductor active pattern is provided, which protrudes from the substrate in the cell region. A first edge of an upper portion of the first semiconductor active pattern has a rounded shape, and a second edge of an upper portion of the second semiconductor active pattern has a rounded shape. A curvature of the first edge is greater than a curvature of the second edge.

公开(公告)号：US11259103B2

公开(公告)日：2022-02-22

申请号：US16643214

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwa-Sung Kim ,  Dong Hyun Sohn ,  Ji-Eun Lee

IPC: G10L21/00 ,  G10L25/00 ,  H04R1/04 ,  G10L15/26 ,  G10L15/28 ,  H04R1/02

Abstract: The present disclosure relates to a home appliance capable of being operated by speech of a user. The home appliance includes a main body forming an outer appearance, a microphone including at least one sensing portion disposed to direct to the front of the main body to detect speech of a user, and a speaker unit disposed to be spaced apart from the microphone unit by a predetermined distance.

公开(公告)号：US20170084615A1

公开(公告)日：2017-03-23

申请号：US15204805

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin Lee ,  Ji-Eun Lee ,  Kyoung-Ho Jung ,  Satoru Yamada ,  Moonyoung Jeong

IPC: H01L27/108 ,  H01L21/3215 ,  H01L29/49 ,  H01L21/28 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L27/10876 ,  H01L21/28088 ,  H01L21/3215 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Provided are a semiconductor device having a gate and a method of forming the same. The method includes forming a gate dielectric, forming a first conductive material layer on the gate dielectric, forming a source material layer on the first conductive material layer, and diffusing a first element included in the source material layer into the first conductive material layer by performing a thermal treatment process to form a doped material layer.

公开(公告)号：US11606634B2

公开(公告)日：2023-03-14

申请号：US17669633

申请日：2022-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwa-Sung Kim ,  Dong Hyun Sohn ,  Ji-Eun Lee

IPC: G10L21/00 ,  G10L25/00 ,  H04R1/04 ,  G10L15/26 ,  G10L15/28 ,  H04R1/02

Abstract: A home appliance includes an electrical equipment compartment disposed in an upper portion of the home appliance, and including an upper side that is open, an electrical equipment compartment cover to cover the open upper side of the electrical equipment compartment, and including a speaker hole, a microphone accommodating portion which protrudes upward from an upper side of the electrical equipment compartment cover and including an accommodating space and a front portion that includes microphone holes laterally spaced apart from each other and which face toward a front of the home appliance, a microphone unit including a printed circuit board (PCB) disposed in the accommodation space behind the microphone holes and including microphone chips mounted on the PCB, and a speaker unit disposed in the electrical equipment compartment to correspond to the speaker hole.