公开(公告)号：US20230402299A1

公开(公告)日：2023-12-14

申请号：US18200619

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin Park ,  Songyun Kang ,  Sungyong Park ,  Kiseok Lee

IPC: H01L21/67 ,  B08B1/04 ,  B08B1/00

CPC classification number: H01L21/67092 ,  B08B1/04 ,  B08B1/001

Abstract: A wafer cleaning apparatus includes a base, a roller installation table installed on the base, a wafer support unit disposed at the roller installation table and having a support roller for rotatably supporting an edge of a wafer, a pressing roller installed on the roller installation table and above the wafer support unit, and configured to press opposite surfaces of the wafer, and a driving unit providing a force in a direction, crossing a direction of a central axis of the pressing roller, so that a shape of the pressing roller is deformed. The pressing roller deformed by the driving unit applies a first pressure to a central portion of the wafer and a second pressure, different from the first pressure, to an edge portion of the water.

公开(公告)号：US20250151258A1

公开(公告)日：2025-05-08

申请号：US18926393

申请日：2024-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINBUM KIM ,  DAE-JIN NAM ,  Hyojin Park ,  Soomin SON ,  GUIFU YANG ,  Kyeonggyu LEE ,  Inhae ZOH

IPC: H10B12/00

Abstract: Disclosed is a semiconductor device comprising a substrate that includes a device isolation pattern and an active region, a bit line that extends in a first direction on the substrate, a semiconductor pattern on the bit line, a growth mask layer on the bit line and having a sidewall in contact with the semiconductor pattern, a word line on the bit line and extending in a second direction that intersects the first direction, and a gate dielectric pattern between the word line and the semiconductor pattern. A top surface of the growth mask layer is at a level higher than that of a bottom surface of the semiconductor pattern.

公开(公告)号：US20230209814A1

公开(公告)日：2023-06-29

申请号：US17819295

申请日：2022-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonok Jung ,  Hyojin Park ,  Hojin Sung ,  Ji-Eun Lee ,  Young-Seung Cho

IPC: H01L27/108 ,  H01L21/762

CPC classification number: H01L27/10897 ,  H01L27/10844 ,  H01L21/76232 ,  H01L27/10814

Abstract: A semiconductor device includes a substrate having a peripheral region and a cell region therein. A first semiconductor active pattern is provided, which protrudes from the substrate in the peripheral region. A second semiconductor active pattern is provided, which protrudes from the substrate in the cell region. A first edge of an upper portion of the first semiconductor active pattern has a rounded shape, and a second edge of an upper portion of the second semiconductor active pattern has a rounded shape. A curvature of the first edge is greater than a curvature of the second edge.