公开(公告)号：US20250151258A1

公开(公告)日：2025-05-08

申请号：US18926393

申请日：2024-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINBUM KIM ,  DAE-JIN NAM ,  Hyojin Park ,  Soomin SON ,  GUIFU YANG ,  Kyeonggyu LEE ,  Inhae ZOH

IPC: H10B12/00

Abstract: Disclosed is a semiconductor device comprising a substrate that includes a device isolation pattern and an active region, a bit line that extends in a first direction on the substrate, a semiconductor pattern on the bit line, a growth mask layer on the bit line and having a sidewall in contact with the semiconductor pattern, a word line on the bit line and extending in a second direction that intersects the first direction, and a gate dielectric pattern between the word line and the semiconductor pattern. A top surface of the growth mask layer is at a level higher than that of a bottom surface of the semiconductor pattern.

公开(公告)号：US20240421232A1

公开(公告)日：2024-12-19

申请号：US18586125

申请日：2024-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk YANG ,  Sung-Hwan JANG ,  Do Hee KIM ,  Jin Bum KIM ,  Sung Uk JANG ,  Inhae ZOH

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a lower pattern extending in a first direction, a plurality of wire patterns spaced apart from the lower pattern in a second direction on the lower pattern, and a gate electrode surrounding the plurality of wire patterns and extending in a third direction, on the lower pattern. Each of the plurality of wire patterns includes a transition metal dichalcogenide (TMD) material. Each of the plurality of wire patterns includes a pair of first areas protruding from sidewalls of the gate electrode in the first direction and a second area between the first areas. A phase of the first area is different from a phase of the second area.