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    Semiconductor memory device
    1.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US11956957B2

    公开(公告)日：2024-04-09

    申请号：US17203122

    申请日：2021-03-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji Young Kim ,  Woo Sung Yang ,  Sung-Min Hwang ,  Suk Kang Sung ,  Joon-Sung Lim

    IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

    CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

    Abstract: A semiconductor memory device includes a first stacked structure, a first supporter layer, a second stacked structure, a block cut structure, and a second supporter layer on the second stacked structure and separated by a second cut pattern. The first stacked structure includes a first and second stack, the second stacked structure includes a third stack separated by the block cut structure and a fourth stack, the first supporter layer is on the first stack and the second stack, the second supporter layer is on the third stack and the fourth stack, the first cut pattern includes a first connection on the block cut structure and connecting the first supporter layer and the second stack, and the second cut pattern of the second supporter layer includes a second connection on the block cut structure and connecting the second supporter layer placed on the third stack and the fourth stack.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20200373306A1

    公开(公告)日：2020-11-26

    申请号：US16991738

    申请日：2020-08-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JIN A KIM ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

    IPC: H01L27/108 ,  H01L21/66

    Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

    Semiconductor device and method of fabricating the same
    5.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US10804277B2

    公开(公告)日：2020-10-13

    申请号：US15718737

    申请日：2017-09-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin A Kim ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

    IPC: H01L27/108 ,  H01L21/66

    Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

    Methods of fabricating semiconductor devices
    6.
    发明授权
    Methods of fabricating semiconductor devices 有权

    公开(公告)号：US10804145B2

    公开(公告)日：2020-10-13

    申请号：US16545150

    申请日：2019-08-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yeong Gil Kim ,  Han Seong Kim ,  Jong Min Baek ,  Ji Young Kim ,  Sung Bin Park ,  Deok Young Jung ,  Kyu Hee Han

    IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311 ,  H01L21/02 ,  H01L23/522

    Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.

    Method of tracking moving object, method of determining display state of moving object, and control apparatus for tracking moving object
    9.
    发明授权
    Method of tracking moving object, method of determining display state of moving object, and control apparatus for tracking moving object 有权
    跟踪运动物体的方法，确定运动物体的显示状态的方法以及跟踪运动物体的控制装置

    公开(公告)号：US09349048B2

    公开(公告)日：2016-05-24

    申请号：US14162879

    申请日：2014-01-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： No San Kwak ,  Seung Yong Hyung ,  Woong Kwon ,  Ji Young Kim ,  Kwang Kyu Lee

    IPC: G06K9/00 ,  G06T7/20 ,  G06T7/00

    CPC classification number: G06K9/00624 ,  G06K2209/057 ,  G06T7/277 ,  G06T7/73 ,  G06T2207/10068 ,  G06T2207/30021

    Abstract: A method of tracking a moving object includes measuring displacement of an object to be tracked, obtaining a particle of the object to be tracked using the measured displacement, and tracking the object using pose information of the object in an image thereof and the obtained particle. A control apparatus includes an imaging module to perform imaging of an object and generates an image, and a tracking unit to acquire displacement and pose information of the object using the generated image of the object, to set a particle of the object using the acquired displacement of the object, and to track the object using the pose information of the object and the particle.

    Abstract translation: 跟踪运动物体的方法包括测量待跟踪对象的位移，使用所测量的位移获得待跟踪对象的粒子，并使用其图像中的对象的姿态信息和所获得的粒子来跟踪对象。 控制装置包括：成像模块，用于对物体进行成像并生成图像;跟踪单元，使用所生成的对象的图像获取位移并构图物体的信息;使用获取的位移来设定物体的粒子; 并且使用对象和粒子的姿势信息来跟踪对象。

    Robot control methods
    10.
    发明授权
    Robot control methods 有权
    机器人控制方法

    公开(公告)号：US09254568B2

    公开(公告)日：2016-02-09

    申请号：US14153302

    申请日：2014-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji Young Kim ,  Kwang Kyu Lee ,  Woong Kwon ,  Kyung Shik Roh ,  Ju Suk Lee ,  Seung Yong Hyung

    IPC: G05B19/41 ,  B25J9/16

    CPC classification number: B25J9/1625 ,  G05B2219/40299 ,  Y10S901/16

    Abstract: A robot control method of controlling a robot that has a flexible module including ‘n’ first nodes participating in pan motion and ‘n’ second nodes participating in tilt motion may include: measuring a translational motion distance, a pan motion angle, and a tilt motion angle of the flexible module; calculating state vectors of the ‘n’ first nodes and the ‘n’ second nodes using the measured translational motion distance; calculating operating angle distribution rates of the ‘n’ first nodes and operating angle distribution rates of the ‘n’ second nodes using the calculated state vectors of the ‘n’ first nodes and the calculated state vectors of the ‘n’ second nodes; and/or calculating operating angles of the ‘n’ first nodes and operating angles of the ‘n’ second nodes using the calculated operating angle distribution rates and the measured pan motion angle and tilt motion angle.

    Abstract translation: 控制机器人的机器人控制方法包括：测量平移运动距离，平移运动角度和俯仰角度的柔性模块，该柔性模块包括参与平移运动的第一节点和第n节点参与倾斜运动 柔性模块的运动角度; 使用测量的平移运动距离计算'n'个第一节点和'n'个第二节点的状态向量; 使用“n”个第一节点的计算状态矢量和“n”个第二节点的计算状态向量来计算'n'个第一节点的运行角分布率和'n'个第二节点的操作角分布率; 和/或使用所计算的操作角分布速率和测量的平移运动角度和倾斜运动角度来计算'n'个第一节点的运动角度和'n'个第二节点的操作角度。

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