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公开(公告)号：US20180175040A1
公开(公告)日：2018-06-21
申请号：US15722085
申请日：2017-10-02
发明人： JIN A KIM , Sun Young Lee , Ji Young Kim , Chang Hyun Cho
IPC分类号： H01L27/108 , H01L29/423 , H01L21/762
CPC分类号： H01L27/10829 , H01L21/76224 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/1087 , H01L27/10876 , H01L29/4236
摘要： A semiconductor device is provided. The provided semiconductor device may have enhanced reliability and operating characteristics. The semiconductor device includes a substrate, a device isolation film formed within the substrate, a first gate structure formed within the substrate, a recess formed on at least one side of the first gate structure and within the substrate and the device isolation film, the recess comprising an upper portion and a lower portion wherein the lower portion of the recess is formed within the substrate and the upper portion of the recess is formed across the substrate and the device isolation film, a buried contact filling the recess and an information storage electrically connected to the buried contact.
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公开(公告)号：US20220399346A1
公开(公告)日：2022-12-15
申请号：US17821331
申请日：2022-08-22
发明人： JIN A KIM , SUN YOUNG LEE , YONG KWAN KIM , JI YOUNG KIM , CHANG HYUN CHO
IPC分类号： H01L27/108 , H01L21/66
摘要： A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.
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公开(公告)号：US20200373306A1
公开(公告)日：2020-11-26
申请号：US16991738
申请日：2020-08-12
发明人： JIN A KIM , Sun Young Lee , Yong Kwan Kim , Ji Young Kim , Chang Hyun Cho
IPC分类号： H01L27/108 , H01L21/66
摘要： A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.
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公开(公告)号：US20180166450A1
公开(公告)日：2018-06-14
申请号：US15718737
申请日：2017-09-28
发明人： JIN A KIM , SUN YOUNG LEE , YONG KWAN KIM , JI YOUNG KIM , CHANG HYUN CHO
IPC分类号： H01L27/108 , H01L21/66
CPC分类号： H01L27/10885 , H01L22/26 , H01L27/10814 , H01L27/10823 , H01L27/10852 , H01L27/10855 , H01L27/10876 , H01L27/10888 , H01L27/10897
摘要： A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.
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