公开(公告)号：US10825766B2

公开(公告)日：2020-11-03

申请号：US16285583

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Young Kim ,  Kyu Hee Han ,  Sung Bin Park ,  Yeong Gil Kim ,  Jong Min Baek ,  Kyoung Woo Lee ,  Deok Young Jung

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L21/311

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.

公开(公告)号：US20200227314A1

公开(公告)日：2020-07-16

申请号：US16545150

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Gil Kim ,  Han Seong Kim ,  Jong Min Baek ,  Ji Young Kim ,  Sung Bin Park ,  Deok Young Jung ,  Kyu Hee Han

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.

公开(公告)号：US10804145B2

公开(公告)日：2020-10-13

申请号：US16545150

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Gil Kim ,  Han Seong Kim ,  Jong Min Baek ,  Ji Young Kim ,  Sung Bin Park ,  Deok Young Jung ,  Kyu Hee Han

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311 ,  H01L21/02 ,  H01L23/522

Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.