公开(公告)号：US11387144B2

公开(公告)日：2022-07-12

申请号：US17070012

申请日：2020-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daeho Yoon ,  Daeseon Jeon ,  Jaeyoung Choi

IPC: H01L21/768 ,  H01L27/02 ,  H01L23/528 ,  G06F30/394 ,  G06F30/398

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises providing a layout comprising a first group that includes first and second patterns and a second group that includes third and fourth patterns, examining a bridge risk region in the layout, biasing one end of at least one of the first and third patterns, and forming first to fourth conductive patterns by respectively using the first to fourth patterns of the layout. The one end of at least one of the first and third patterns are adjacent to the bridge risk region.

公开(公告)号：US11537230B2

公开(公告)日：2022-12-27

申请号：US16930688

申请日：2020-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Banghyun Kwon ,  Inhyung Jung ,  Jaeyoung Choi ,  Sangheon Kim ,  Jinwan An

IPC: G06F3/041 ,  G06F3/038

Abstract: An electronic device is provided. The electronic device includes a sensing panel, at least one processor electrically connected to the sensing panel and the communication module, and a memory electrically connected to the at least one processor. The memory may store instructions configured to, when executed by the at least one processor, cause the at least one processor to, based on a pen signal from the stylus pen being detected through the sensing panel, perform a first operation identified based on the detected pen signal, and based on the pen signal from the stylus pen not being detected through the sensing panel, receive, through the communication module, at least one communication signal, identify a gesture based on information on a position of the stylus pen, included in the received at least one communication signal, and perform a second operation corresponding to the identified gesture. Various other embodiments are possible.

公开(公告)号：US20190172824A1

公开(公告)日：2019-06-06

申请号：US16022965

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daeho YOON ,  Daeseon Jeon ,  Jaeyoung Choi

IPC: H01L27/02 ,  H01L23/528 ,  H01L21/768 ,  G06F17/50

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises providing a layout comprising a first group that includes first and second patterns and a second group that includes third and fourth patterns, examining a bridge risk region in the layout, biasing one end of at least one of the first and third patterns, and forming first to fourth conductive patterns by respectively using the first to fourth patterns of the layout. The one end of at least one of the first and third patterns are adjacent to the bridge risk region.

公开(公告)号：US09988274B2

公开(公告)日：2018-06-05

申请号：US13766876

申请日：2013-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Mook Choi ,  Byung Hee Hong ,  Jaeyoung Choi

IPC: B32B9/00 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00 ,  C07C31/125 ,  C07C31/20 ,  C07C47/02 ,  C07C49/12 ,  C07C53/128 ,  C07C69/22 ,  C01B32/23 ,  C01B32/186 ,  C01B32/194

CPC classification number: C01B32/194 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/23 ,  C01B2204/04 ,  C01B2204/32 ,  C07C31/125 ,  C07C31/20 ,  C07C47/02 ,  C07C49/12 ,  C07C53/128 ,  C07C69/22 ,  Y10T428/24479 ,  Y10T428/24802 ,  Y10T428/30

Abstract: A method for chemical modification of graphene includes dry etching graphene to provide an etched graphene; and introducing a functional group at an edge of the etched graphene. Also disclosed is graphene, including an etched edge portion, the etched portion including a functional group.