Electronic device managing duplicate requests and method of operating the same

    公开(公告)号:US12299312B2

    公开(公告)日:2025-05-13

    申请号:US18535515

    申请日:2023-12-11

    Abstract: An electronic device includes an input handling circuit, a control circuit, and a data transfer circuit. The input handling circuits receives a first request including an address from a first memory device, aligns the address with an access unit of a second memory device, requests a determination for the aligned address, and transmits a second request to the second memory device based on a determination result. The control circuit determines, based on the request, whether a duplicate address with the aligned address is present to generate the determination result and updates a bitmask based on the determination result. The data transfer circuit receives the second request from the second memory device and transfers data based on the bitmask. The bitmask includes one or more bits, each corresponding to the first request and indicating a location corresponding to the first request within an access unit of the second memory device.

    JOSEPHSON JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240099161A1

    公开(公告)日:2024-03-21

    申请号:US18116681

    申请日:2023-03-02

    CPC classification number: H10N60/805 H10N60/0912 H10N60/12

    Abstract: A Josephson junction device and a method of manufacturing the Josephson junction device are disclosed. The Josephson junction device includes a substrate having a top surface and a trench recessed below the first surface, wherein sidewalls of the substrate define sidewalls of the trench; a first superconducting electrode formed on the top surface of the substrate with sidewalls further defining the sidewalls of the trench; a tunneling thin film formed over the sidewalls of the substrate and over the sidewalls of the first superconducting electrode; and a second superconducting electrode formed in the trench in contact with the tunneling thin film and with top surface above the top surface of the substrate, wherein a superconducting tunnel junction is formed between the first superconducting electrode and the second superconducting electrode through the tunneling thin film.

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