Abstract:
A bonding apparatus of substrate manufacturing equipment includes an upper stage, a lower stage facing the upper stage and which is configure and dedicated to support a processed substrate on which semiconductor chips are stacked (set), and an elevating mechanism for raising the lower stage relative to the upper stage to provide pressure for pressing the substrate and chips towards each other.
Abstract:
A method of operating a wireless communication apparatus including an antenna array including a plurality of sub-arrays includes sweeping a receiving beam formed in each of the sub-arrays such that the receiving beam has a plurality of receiving beam patterns at a respective plurality of sweeping positions, and receiving a signal through the antenna array at each of the sweeping positions, generating base channel matrix information including channel matrices corresponding to the receiving beam patterns for each of the sub-arrays, based on the signal, performing a digital sweeping operation on at least one group combination, which is determined using the base channel matrix information, and generating supplemental channel matrix information, and selecting a receiving beam pattern of the antenna array using the base channel matrix information and the supplemental channel matrix information.
Abstract:
The present disclosure provides a semiconductor package having a dummy solder and a manufacturing method thereof. The solder bump array is disposed on one surface of the semiconductor package, and a dummy solder is disposed point-symmetrically about a center of the solder bump array. The solder bumps have a first melting point, and the dummy solder has a second melting point lower than the first melting point so that the dummy solder melts before the solder bumps to generate a force in a direction in which the solder bump contacts the connection terminal of the external device by surface tension in a soldering process.
Abstract:
A semiconductor package includes a first structure, a second structure, a plurality of first connection members including SnBi; a plurality of second connection members including SAC (Sn, Ag and Cu). Each first connection member of the plurality of first connection members has a first surface and a second surface opposite each other, and the first surface of each first connection member of the plurality of first connection members is bonded to the first structure. A third surface of each second connection member of a plurality of second connection members is bonded to a corresponding second surface of a respective first connection member, and for each second connection member, a fourth surface of the second connection member that is opposite the third surface of the second connection member is bonded to the second structure. The third surface of each second connection member is flat, and a diameter of each second connection member decreases in a direction receding from the third surface of each second connection member.