公开(公告)号：US20210062335A1

公开(公告)日：2021-03-04

申请号：US17010541

申请日：2020-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghwan Kong ,  Hyouncheol Kim ,  Junseong Park ,  Jaewon Yu ,  Hyunju Lee ,  Kwanghyun Jin ,  Youngmin Ha

IPC: C23C16/44 ,  B05B1/02

Abstract: An apparatus for manufacturing a semiconductor device includes a boat configured to support a plurality of stacked substrates, a first tube surrounding the boat in a lateral direction and having a cylindrical shape with an upper portion thereof being open, and a cleaning gas supply nozzle extending from an outer portion of the first tube to a portion between an interior sidewall of the first tube and the boat. The cleaning gas supply nozzle may include a first segment extending from the outer portion of the first tube to an inner portion of the first tube, a second segment extending in a lengthwise direction of the first tube from an end of the first segment, and a third segment extending in a direction differing from the extension direction of the second segment from an end of the second segment.

公开(公告)号：US09691618B2

公开(公告)日：2017-06-27

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong Sung ,  Sejin Oh ,  Je-Hun Woo ,  Hyunju Lee ,  Seungkyu Lim ,  Kiho Hwang

IPC: H01L21/26 ,  H01L21/263 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US08809929B2

公开(公告)日：2014-08-19

申请号：US14016912

申请日：2013-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonmo Park ,  Hyunchul Kim ,  Hyodong Ban ,  Hyunju Lee

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/205

CPC classification number: H01L27/108 ,  H01L21/205 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

Abstract: Memory devices comprise a lower layer that extends across a cell array region and across a peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Related methods are also provided.

Abstract translation: 存储器件包括延伸跨越单元阵列区域并跨越周边区域并且包括从单元阵列区域到外围区域的平坦外表面的下层。 信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸，并且在下层的平坦外表面上方的周边区域中延伸。 绝缘层设置在下层，包括从电池阵列区域到外围区域的平坦的外表面。 在绝缘层的平坦外表面上设置有平坦的阻挡层，并延伸穿过电池阵列区域和周边区域。 还提供了相关方法。

公开(公告)号：US11937764B2

公开(公告)日：2024-03-26

申请号：US17388477

申请日：2021-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seehyun Kim ,  Youngchul Ko ,  Higon Koo ,  Kisup Lee ,  Hyunho Lee ,  Seungryong Cha ,  Seungwoo Choi ,  Kihwan Kwon ,  Hyeoncheol Kim ,  Hwagyu Song ,  Sungcheol Lee ,  Hyunju Lee ,  Ingyu Choi

IPC: A47L9/14 ,  A47L9/28 ,  B01D46/00

CPC classification number: A47L9/149 ,  A47L9/1409 ,  A47L9/2873 ,  B01D46/0036 ,  B01D46/0038 ,  B01D46/0043 ,  B01D2273/30 ,  B01D2279/55

Abstract: Provided is a cleaning device including a vacuum cleaner including a dust collector into which dirt and dust is collected, a docking station connected to the dust collector and having a long axis extending in a first direction, and the docking station includes a docking part coupled to the dust collector to remove dirt and dust collected in the dust collector, a sucking device sucking up the dirt and dust and inside air in the dust collector docked with the docking part through the docking part, and a circulation duct arranged for the air sucked up by the sucking device to be circulated to the docking part.

公开(公告)号：US20230361046A1

公开(公告)日：2023-11-09

申请号：US18095642

申请日：2023-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juil Choi ,  Jusuk Kang ,  Hyungjun Park ,  Sanghyuck Oh ,  Hyunju Lee ,  Sangyeol Choi

IPC: H01L23/538 ,  H01L23/498 ,  H01L23/31 ,  H10B80/00

CPC classification number: H01L23/5383 ,  H01L23/49811 ,  H01L23/3128 ,  H01L23/49816 ,  H10B80/00

Abstract: Provided are a semiconductor package having a structure maximizing heat dissipation efficiency and a method of manufacturing the same. The semiconductor package includes a first redistribution substrate, a first semiconductor chip on the first redistribution substrate, a plurality of through posts on the first redistribution substrate, around the first semiconductor chip, and a second redistribution substrate located over the first semiconductor chip and the through posts, wherein a top surface of the first semiconductor chip is in contact with a bottom surface of the second redistribution substrate.

公开(公告)号：US20140015028A1

公开(公告)日：2014-01-16

申请号：US14016912

申请日：2013-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonmo Park ,  Hyunchul Kim ,  Hyodong Ban ,  Hyunju Lee

IPC: H01L27/108

CPC classification number: H01L27/108 ,  H01L21/205 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

Abstract: Memory devices comprise a lower layer that extends across a cell array region and across a peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Related methods are also provided.

Abstract translation: 存储器件包括延伸跨越单元阵列区域并跨越周边区域并且包括从单元阵列区域到外围区域的平坦外表面的下层。 信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸，并且在下层的平坦外表面上方的周边区域中延伸。 绝缘层设置在下层，包括从电池阵列区域到外围区域的平坦的外表面。 在绝缘层的平坦外表面上设置有平坦的阻挡层，并延伸穿过电池阵列区域和周边区域。 还提供了相关方法。