公开(公告)号：US08809929B2

公开(公告)日：2014-08-19

申请号：US14016912

申请日：2013-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonmo Park ,  Hyunchul Kim ,  Hyodong Ban ,  Hyunju Lee

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/205

CPC classification number: H01L27/108 ,  H01L21/205 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

Abstract: Memory devices comprise a lower layer that extends across a cell array region and across a peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Related methods are also provided.

Abstract translation: 存储器件包括延伸跨越单元阵列区域并跨越周边区域并且包括从单元阵列区域到外围区域的平坦外表面的下层。 信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸，并且在下层的平坦外表面上方的周边区域中延伸。 绝缘层设置在下层，包括从电池阵列区域到外围区域的平坦的外表面。 在绝缘层的平坦外表面上设置有平坦的阻挡层，并延伸穿过电池阵列区域和周边区域。 还提供了相关方法。

公开(公告)号：US20140015028A1

公开(公告)日：2014-01-16

申请号：US14016912

申请日：2013-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonmo Park ,  Hyunchul Kim ,  Hyodong Ban ,  Hyunju Lee

IPC: H01L27/108

CPC classification number: H01L27/108 ,  H01L21/205 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

Abstract: Memory devices comprise a lower layer that extends across a cell array region and across a peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Related methods are also provided.

Abstract translation: 存储器件包括延伸跨越单元阵列区域并跨越周边区域并且包括从单元阵列区域到外围区域的平坦外表面的下层。 信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸，并且在下层的平坦外表面上方的周边区域中延伸。 绝缘层设置在下层，包括从电池阵列区域到外围区域的平坦的外表面。 在绝缘层的平坦外表面上设置有平坦的阻挡层，并延伸穿过电池阵列区域和周边区域。 还提供了相关方法。