公开(公告)号：US10256237B2

公开(公告)日：2019-04-09

申请号：US15656377

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han Lee ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/06

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

公开(公告)号：US10312243B2

公开(公告)日：2019-06-04

申请号：US15920628

申请日：2018-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-jung Lee ,  Dongsoo Woo ,  Jin-Seong Lee ,  Namho Jeon ,  Jaeho Hong

IPC: H01L29/43 ,  H01L29/49 ,  H01L27/108 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/51

Abstract: A semiconductor memory device includes a separation member defining active regions of a substrate. Gate lines intersect the active regions and are each buried in a trench formed in the substrate. Each of the gate lines includes a lower electrode structure and an upper electrode structure on the lower electrode structure. The upper electrode structure includes a source layer substantially covering a sidewall of the trench and including a work-function adjustment element. A conductive layer is on the source layer. A work-function adjustment layer is disposed between the source layer and the conductive layer. The work-function adjustment layer includes a material different from that of the source layer and is doped with the work-function adjustment element.

公开(公告)号：US09972701B2

公开(公告)日：2018-05-15

申请号：US15443160

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-woo Kim ,  Hyun-jung Lee ,  Sun-jung Kim ,  Seung-hun Lee ,  Keum-seok Park ,  Edward Namkyu Cho

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/417 ,  H01L29/51 ,  H01L29/775 ,  H01L29/10

CPC classification number: H01L29/66742 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/1079 ,  H01L29/41725 ,  H01L29/42392 ,  H01L29/515 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device includes a fin-type active area, nanosheets, a gate, a source/drain region, and insulating spacers. The fin-type active area protrudes from a substrate in a first direction. The nanosheets are spaced from an upper surface of the fin-type active area and include channel regions. The gate is over the fin-type active area. The source/drain region is connected to the nanosheets. The insulating spacers are in the fin-type active area and between the nanosheets. Air spaces are between the insulating spacers and the source/drain region based on positions of the insulating spacers.

公开(公告)号：US12029614B2

公开(公告)日：2024-07-09

申请号：US16174585

申请日：2018-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-hwa Oh ,  Dong-jae Lee ,  Se-min Kim ,  Jeong-yong Song ,  Hyun-jung Lee

IPC: A61B8/00 ,  A61B5/00 ,  A61B6/00 ,  A61B6/46 ,  A61B8/08 ,  G06T7/00 ,  G16H30/40 ,  G16H40/63 ,  G16H50/20 ,  A61B1/00 ,  A61B1/045 ,  A61B5/055 ,  G06T5/70

CPC classification number: A61B8/463 ,  A61B5/0013 ,  A61B6/463 ,  A61B6/563 ,  G06T7/0012 ,  G16H30/40 ,  G16H40/63 ,  G16H50/20 ,  A61B1/00016 ,  A61B1/045 ,  A61B5/055 ,  A61B6/5205 ,  A61B6/5217 ,  A61B8/08 ,  A61B8/466 ,  A61B8/483 ,  G06T5/70 ,  G06T2207/10081 ,  G06T2207/10088 ,  G06T2207/10116 ,  G06T2207/10132 ,  G06T2207/20084 ,  G06T2207/30004 ,  G06T2207/30061 ,  G06T2207/30096

Abstract: A medical image transmitting method includes obtaining a medical image generated by imaging an object; performing a first determination to determine whether the object has an abnormality, based on the medical image; performing a second determination to determine, based on the first determination, whether to transmit at least one assistance image associated with the medical image; and when the object has no abnormalities, transmitting, to an external apparatus, the medical image, thereby minimizing a data processing amount and a data transmission amount.

公开(公告)号：US11152365B2

公开(公告)日：2021-10-19

申请号：US15966554

申请日：2018-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namho Jeon ,  Jin-Seong Lee ,  Hyun-jung Lee ,  Dongsoo Woo ,  Donggyu Heo ,  Jaeho Hong

IPC: H01L27/105 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/8239 ,  H01L27/108

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.

公开(公告)号：US10818672B2

公开(公告)日：2020-10-27

申请号：US16405548

申请日：2019-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-jung Lee ,  Dongsoo Woo ,  Jin-Seong Lee ,  Namho Jeon ,  Jaeho Hong

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/43 ,  H01L21/8238 ,  H01L29/51 ,  H01L21/3215

Abstract: A semiconductor memory device includes a separation member defining active regions of a substrate. Gate lines intersect the active regions and are each buried in a trench formed in the substrate. Each of the gate lines includes a lower electrode structure and an upper electrode structure on the lower electrode structure. The upper electrode structure includes a source layer substantially covering a sidewall of the trench and including a work-function adjustment element. A conductive layer is on the source layer. A work-function adjustment layer is disposed between the source layer and the conductive layer. The work-function adjustment layer includes a material different from that of the source layer and is doped with the work-function adjustment element.

公开(公告)号：US10559565B2

公开(公告)日：2020-02-11

申请号：US16288727

申请日：2019-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han Lee ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/02

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

公开(公告)号：US20180182756A1

公开(公告)日：2018-06-28

申请号：US15656377

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han LEE ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L29/06 ,  H01L27/11

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L27/0207 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0649

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

公开(公告)号：US12070356B2

公开(公告)日：2024-08-27

申请号：US16174585

申请日：2018-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-hwa Oh ,  Dong-jae Lee ,  Se-min Kim ,  Jeong-yong Song ,  Hyun-jung Lee

IPC: A61B8/00 ,  A61B5/00 ,  A61B6/00 ,  A61B6/46 ,  A61B8/08 ,  G06T7/00 ,  G16H30/40 ,  G16H40/63 ,  G16H50/20 ,  A61B1/00 ,  A61B1/045 ,  A61B5/055 ,  G06T5/70

CPC classification number: A61B8/463 ,  A61B5/0013 ,  A61B6/463 ,  A61B6/563 ,  G06T7/0012 ,  G16H30/40 ,  G16H40/63 ,  G16H50/20 ,  A61B1/00016 ,  A61B1/045 ,  A61B5/055 ,  A61B6/5205 ,  A61B6/5217 ,  A61B8/08 ,  A61B8/466 ,  A61B8/483 ,  G06T5/70 ,  G06T2207/10081 ,  G06T2207/10088 ,  G06T2207/10116 ,  G06T2207/10132 ,  G06T2207/20084 ,  G06T2207/30004 ,  G06T2207/30061 ,  G06T2207/30096

Abstract: A medical image transmitting method includes obtaining a medical image generated by imaging an object; performing a first determination to determine whether the object has an abnormality, based on the medical image; performing a second determination to determine, based on the first determination, whether to transmit at least one assistance image associated with the medical image; and when the object has no abnormalities, transmitting, to an external apparatus, the medical image, thereby minimizing a data processing amount and a data transmission amount.

公开(公告)号：US11189618B2

公开(公告)日：2021-11-30

申请号：US15966554

申请日：2018-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namho Jeon ,  Jin-Seong Lee ,  Hyun-jung Lee ,  Dongsoo Woo ,  Donggyu Heo ,  Jaeho Hong

IPC: H01L27/105 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/8239 ,  H01L27/108

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.