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    METHOD AND DEVICE TO SEARCH FOR AND EXECUTE CONTENT USING A TOUCH SCREEN
    1.
    发明申请
    METHOD AND DEVICE TO SEARCH FOR AND EXECUTE CONTENT USING A TOUCH SCREEN 审中-公开
    使用触摸屏搜索和执行内容的方法和设备

    公开(公告)号：US20150186400A1

    公开(公告)日：2015-07-02

    申请号：US14643975

    申请日：2015-03-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji Yeon KWAK ,  Hyun Jin KIM ,  Min Kyu PARK

    IPC: G06F17/30 ,  G06F3/0482 ,  G06F3/0481

    CPC classification number: G06F17/30126 ,  G06F3/04817 ,  G06F3/0482 ,  G06F3/0488 ,  G06F17/30601 ,  G06F17/30997

    Abstract: A method and device to search for and execute content are provided. The method of searching for and executing content includes displaying at least one content icon, and identifying, if an approach to one of the at least one content icon is detected, a content icon of a position at which the approach is detected. The method further comprises determining a classification category of a content corresponding to the identified content icon, searching for at least one related content classified in the same classification category as the content corresponding to the identified content icon, displaying the identified content icon and at least one related content icon corresponding to the at least one related content using a preset display method, and executing, if one of the at least one content icon is touched, a content corresponding to the touched content icon.

    Abstract translation: 提供了搜索和执行内容的方法和设备。 搜索和执行内容的方法包括显示至少一个内容图标，以及如果检测到所述至少一个内容图标中的一个内容图标的方法，则识别检测到所述方法的位置的内容图标。 该方法还包括确定与所识别的内容图标相对应的内容的分类类别，搜索分类在与所识别的内容图标相对应的内容的相同分类类别中的至少一个相关内容，显示所识别的内容图标和至少一个 使用预设显示方法对应于所述至少一个相关内容的相关内容图标，并且如果触摸了所述至少一个内容图标中的一个，则执行与所触摸的内容图标相对应的内容。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210257470A1

    公开(公告)日：2021-08-19

    申请号：US17224269

    申请日：2021-04-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Deok Han BAE ,  Hyung Jong LEE ,  Hyun Jin KIM

    IPC: H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092 ,  H01L27/12 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/11

    Abstract: A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.

    SEMICONDUCTOR DEVICE INCLUDING TEST STRUCTURE
    4.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING TEST STRUCTURE 审中-公开

    公开(公告)号：US20190326187A1

    公开(公告)日：2019-10-24

    申请号：US16191881

    申请日：2018-11-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun Chul SAGONG ,  June Kyun PARK ,  Hyun Jin KIM ,  Ki Hyun CHOI ,  Sang Woo PAE

    IPC: H01L21/66 ,  H01L27/11 ,  H01L27/088

    Abstract: A semiconductor device including a test structure includes a semiconductor substrate and a plurality of test structures on the semiconductor substrate. The test structures include respective lower active regions extending from the semiconductor substrate in a vertical direction and having different widths, and upper active regions extending from respective lower active regions in the vertical direction. Each of the lower active regions includes first regions and second regions. The first regions overlap the upper active regions and are between the second regions, and the second regions include outer regions and inner regions between the outer regions. The outer regions, located in the lower active regions having different widths, have different widths.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190267459A1

    公开(公告)日：2019-08-29

    申请号：US16406472

    申请日：2019-05-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Deok Han BAE ,  Hyung Jong LEE ,  Hyun Jin KIM

    IPC: H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/66 ,  H01L27/12 ,  H01L21/8234 ,  H01L27/092 ,  H01L27/11

    Abstract: A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.

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