公开(公告)号：US20190326187A1

公开(公告)日：2019-10-24

申请号：US16191881

申请日：2018-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Chul SAGONG ,  June Kyun PARK ,  Hyun Jin KIM ,  Ki Hyun CHOI ,  Sang Woo PAE

IPC: H01L21/66 ,  H01L27/11 ,  H01L27/088

Abstract: A semiconductor device including a test structure includes a semiconductor substrate and a plurality of test structures on the semiconductor substrate. The test structures include respective lower active regions extending from the semiconductor substrate in a vertical direction and having different widths, and upper active regions extending from respective lower active regions in the vertical direction. Each of the lower active regions includes first regions and second regions. The first regions overlap the upper active regions and are between the second regions, and the second regions include outer regions and inner regions between the outer regions. The outer regions, located in the lower active regions having different widths, have different widths.

公开(公告)号：US20200035675A1

公开(公告)日：2020-01-30

申请号：US16395841

申请日：2019-04-26

Applicant: SAMSUNG ELECTRONICS CO, LTD

Inventor： HYUN CHUL SAGONG ,  Sang Woo PAE ,  Ki Hyun CHOI ,  June Kyun PARK ,  Uk Jin JUNG

IPC: H01L27/088 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78

Abstract: A semiconductor device is provided. The Semiconductor device includes a substrate, a first fin type pattern and a second fin type pattern which protrude from an upper surface of the substrate and are spaced apart from each other, a first semiconductor pattern on the first fin type pattern, a second semiconductor pattern on the second tin type pattern and a blocking pattern between the first semiconductor pattern and the second semiconductor pattern, a part of the first semiconductor pattern being inserted in the blocking pattern.