公开(公告)号：US09418998B2

公开(公告)日：2016-08-16

申请号：US14497649

申请日：2014-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L23/528 ,  H01L27/105 ,  H01L21/768 ,  H01L27/108

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

Abstract translation: 提供半导体器件。 半导体器件包括位线结构和接触插头。 接触塞与位线结构的侧壁相邻，并且位于位线结构的倾斜表面上。 此外，在一些实施例中，当倾斜表面接近位线结构的侧壁时，位线结构的倾斜表面的水平变低。

公开(公告)号：US09786558B2

公开(公告)日：2017-10-10

申请号：US15189697

申请日：2016-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L23/528 ,  H01L27/105 ,  H01L21/768 ,  G11C5/06 ,  H01L27/108

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

公开(公告)号：US20150228574A1

公开(公告)日：2015-08-13

申请号：US14497649

申请日：2014-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L23/528 ,  H01L27/105

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

Abstract translation: 提供半导体器件。 半导体器件包括位线结构和接触插塞。 接触塞与位线结构的侧壁相邻，并且位于位线结构的倾斜表面上。 此外，在一些实施例中，当倾斜表面接近位线结构的侧壁时，位线结构的倾斜表面的水平变低。

公开(公告)号：US20160300763A1

公开(公告)日：2016-10-13

申请号：US15189697

申请日：2016-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L21/768 ,  H01L23/528 ,  G11C5/06 ,  H01L27/105

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

公开(公告)号：US20160225845A1

公开(公告)日：2016-08-04

申请号：US15087349

申请日：2016-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

IPC: H01L49/02

CPC classification number: H01L28/88 ,  H01L21/764 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/90

Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

Abstract translation: 半导体器件包括第一电容器结构，第二电容器结构和绝缘图案。 第一电容器结构包括顺序堆叠在基板上的第一下电极，第一电介质层和第一上电极。 第二电容器结构包括第二下电极，第二电介质层和顺序堆叠在基板上并与第一电容器结构相邻的第二上电极。 绝缘图案部分地填充第一和第二电容器结构之间的空间，并且在绝缘图案上的第一和第二电容器结构之间形成气隙。

公开(公告)号：US09431476B2

公开(公告)日：2016-08-30

申请号：US15087349

申请日：2016-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

IPC: H01L21/00 ,  H01L49/02 ,  H01L27/108 ,  H01L21/764

CPC classification number: H01L28/88 ,  H01L21/764 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/90

Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

Abstract translation: 半导体器件包括第一电容器结构，第二电容器结构和绝缘图案。 第一电容器结构包括顺序堆叠在基板上的第一下电极，第一电介质层和第一上电极。 第二电容器结构包括第二下电极，第二电介质层和顺序堆叠在基板上并与第一电容器结构相邻的第二上电极。 绝缘图案部分地填充第一和第二电容器结构之间的空间，并且在绝缘图案上的第一和第二电容器结构之间形成气隙。

公开(公告)号：US10037999B2

公开(公告)日：2018-07-31

申请号：US14591732

申请日：2015-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-ik Kim ,  Hyoung-sub Kim ,  Sung-eui Kim ,  Hoon Jeong

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/108

CPC classification number: H01L27/10885 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.