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    Electronic device for providing content and control method therefor
    1.
    发明授权
    Electronic device for providing content and control method therefor 有权

    公开(公告)号：US10387101B2

    公开(公告)日：2019-08-20

    申请号：US16072010

    申请日：2016-12-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byeong-Jun Kim ,  Jae-Hyun Kim ,  Jun-Soo Lee ,  Ho-Chul Hwang

    IPC: G06F3/01 ,  G06F3/16 ,  G11B20/10 ,  G06Q50/10 ,  H04M1/725 ,  H04R3/04

    Abstract: Disclosed is a control method for an electronic device. An electronic device according to an embodiment comprises: at least one speaker; and a processor. The processor may be configured to: obtain sound source data; obtain first sound source data, corresponding to a first designated frequency band, from the sound source data by using a filter; generate second sound source data by applying sound effect to at least a portion of sound source data corresponding to a second designated frequency band among the sound source data; generate synthesized sound source data corresponding to the sound source data by synthesizing the first sound source data and the second sound source data; and output the synthesized sound source data through the at least one speaker. Other embodiments may also be possible.

    APPARATUS AND METHOD FOR ADJUSTING VOLUME IN TERMINAL
    3.
    发明申请
    APPARATUS AND METHOD FOR ADJUSTING VOLUME IN TERMINAL 有权
    调整终端体积的装置和方法

    公开(公告)号：US20130329911A1

    公开(公告)日：2013-12-12

    申请号：US13913204

    申请日：2013-06-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-Hyun Kim ,  Kyoung-Ho Bang ,  Sang-Hoon Oh ,  Jun-Soo Lee

    IPC: H04R3/00

    CPC classification number: H04R3/00 ,  H03G3/04 ,  H03G3/3026

    Abstract: A method terminal includes an apparatus for automatically adjusting volume in the terminal. An automatic volume adjuster extracts a representative volume from individual frame information of an audio file, and adjusts a master volume by a deviation between the extracted representative volume and a reference volume, and a controller plays the audio file with the master volume adjusted by the automatic volume adjuster.

    Abstract translation: 方法终端包括用于自动调整终端中的音量的装置。 自动音量调节器从音频文件的单独帧信息中提取代表音量，并通过提取的代表音量与参考音量之间的偏差来调整主音量，并且控制器播放具有由自动调节的主音量的音频文件 音量调节器

    SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME 审中-公开
    包括电容器的半导体器件及其制造方法

    公开(公告)号：US20160225845A1

    公开(公告)日：2016-08-04

    申请号：US15087349

    申请日：2016-03-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

    IPC: H01L49/02

    CPC classification number: H01L28/88 ,  H01L21/764 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/90

    Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

    Abstract translation: 半导体器件包括第一电容器结构，第二电容器结构和绝缘图案。 第一电容器结构包括顺序堆叠在基板上的第一下电极，第一电介质层和第一上电极。 第二电容器结构包括第二下电极，第二电介质层和顺序堆叠在基板上并与第一电容器结构相邻的第二上电极。 绝缘图案部分地填充第一和第二电容器结构之间的空间，并且在绝缘图案上的第一和第二电容器结构之间形成气隙。

    PLASMA PROCESSING APPARATUS
    7.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20180358209A1

    公开(公告)日：2018-12-13

    申请号：US15816882

    申请日：2017-11-17

    Applicant: Samsung Electronics Co, Ltd.

    Inventor： Jun-Soo Lee ,  Hak-Young Kim ,  Chung-Won Seo ,  Tae-Hyoung Im

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J2237/334

    Abstract: A plasma processing apparatus includes a process chamber including an inner space; an electrostatic chuck on which a substrate is loaded in the process chamber; a side-gas injection unit that is installed above the electrostatic chuck and includes at least one gas nozzle having an inclined gas flow path that is inclined with respect to a nozzle axis to obliquely supply a process gas into the process chamber from a sidewall of the process chamber; a plasma generation unit configured to generate plasma from the process gas injected into the process chamber; and a controller configured to control the electrostatic chuck, the side-gas injection unit, and the plasma generation unit. The controller controls process parameters under a cyclic ramping condition in which a cycle of the process parameters is continuously increased or decreased.

    Semiconductor devices including capacitors and methods of manufacturing the same
    9.
    发明授权
    Semiconductor devices including capacitors and methods of manufacturing the same 有权
    包括电容器的半导体器件及其制造方法

    公开(公告)号：US09431476B2

    公开(公告)日：2016-08-30

    申请号：US15087349

    申请日：2016-03-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

    IPC: H01L21/00 ,  H01L49/02 ,  H01L27/108 ,  H01L21/764

    CPC classification number: H01L28/88 ,  H01L21/764 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/90

    Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

    Abstract translation: 半导体器件包括第一电容器结构，第二电容器结构和绝缘图案。 第一电容器结构包括顺序堆叠在基板上的第一下电极，第一电介质层和第一上电极。 第二电容器结构包括第二下电极，第二电介质层和顺序堆叠在基板上并与第一电容器结构相邻的第二上电极。 绝缘图案部分地填充第一和第二电容器结构之间的空间，并且在绝缘图案上的第一和第二电容器结构之间形成气隙。

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