公开(公告)号：US20180358209A1

公开(公告)日：2018-12-13

申请号：US15816882

申请日：2017-11-17

Applicant: Samsung Electronics Co, Ltd.

Inventor： Jun-Soo Lee ,  Hak-Young Kim ,  Chung-Won Seo ,  Tae-Hyoung Im

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a process chamber including an inner space; an electrostatic chuck on which a substrate is loaded in the process chamber; a side-gas injection unit that is installed above the electrostatic chuck and includes at least one gas nozzle having an inclined gas flow path that is inclined with respect to a nozzle axis to obliquely supply a process gas into the process chamber from a sidewall of the process chamber; a plasma generation unit configured to generate plasma from the process gas injected into the process chamber; and a controller configured to control the electrostatic chuck, the side-gas injection unit, and the plasma generation unit. The controller controls process parameters under a cyclic ramping condition in which a cycle of the process parameters is continuously increased or decreased.